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STM32F479AI Scheda tecnica(PDF) 180 Page - STMicroelectronics |
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STM32F479AI Scheda tecnica(HTML) 180 Page - STMicroelectronics |
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180 / 217 page ![]() Electrical characteristics STM32F479xx 180/217 DocID028010 Rev 3 Figure 70. NAND controller waveforms for common memory write access SDRAM waveforms and timings • CL = 30 pF on data and address lines. • CL = 10 pF on FMC_SDCLK unless otherwise specified. Table 100. Switching characteristics for NAND Flash read cycles Symbol Parameter Min Max Unit tw(N0E) FMC_NOE low width 4THCLK − 0.5 4THCLK+0.5 ns tsu(D-NOE) FMC_D[15-0] valid data before FMC_NOE high 9 - th(NOE-D) FMC_D[15-0] valid data after FMC_NOE high 0 - td(ALE-NOE) FMC_ALE valid before FMC_NOE low - 3THCLK − 0.5 th(NOE-ALE) FMC_NWE high to FMC_ALE invalid 3THCLK − 2- Table 101. Switching characteristics for NAND Flash write cycles Symbol Parameter Min Max Unit tw(NWE) FMC_NWE low width 4THCLK 4THCLK+1 ns tv(NWE-D) FMC_NWE low to FMC_D[15-0] valid 0 - th(NWE-D) FMC_NWE high to FMC_D[15-0] invalid 3THCLK − 1- td(D-NWE) FMC_D[15-0] valid before FMC_NWE high 5THCLK − 3- td(ALE-NWE) FMC_ALE valid before FMC_NWE low - 3THCLK−0.5 th(NWE-ALE) FMC_NWE high to FMC_ALE invalid 3THCLK − 1- |
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