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Motore di ricerca datesheet componenti elettronici |
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Motore di ricerca datesheet componenti elettronici |
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STM32F413VG Scheda tecnica(PDF) 119 Page - STMicroelectronics |
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STM32F413VG Scheda tecnica(HTML) 119 Page - STMicroelectronics |
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119 / 207 page  DocID029162 Rev 2 119/207 STM32F413xG/H Electrical characteristics 174 Table 52. Flash memory endurance and data retention Table 51. Flash memory programming with VPP voltage Symbol Parameter Conditions Min(1) Typ Max(1) 1. Guaranteed by design. Unit tprog Double word programming TA = 0 to +40 °C VDD = 3.3 V VPP = 8.5 V - 16 100(2) 2. The maximum programming time is measured after 100K erase operations. µs tERASE16KB Sector (16 KB) erase time - 230 - ms tERASE64KB Sector (64 KB) erase time - 490 - tERASE128KB Sector (128 KB) erase time - 875 - tME Mass erase time - 9.8 - s Vprog Programming voltage - 2.7 - 3.6 V VPP VPP voltage range - 7 - 9 V IPP Minimum current sunk on the VPP pin -10 - - mA tVPP(3) 3. VPP should only be connected during programming/erasing. Cumulative time during which VPP is applied - - - 1 hour Symbol Parameter Conditions Value Unit Min(1) 1. Guaranteed by characterization. NEND Endurance TA = –40 to +85 °C (6 suffix versions) TA = –40 to +105 °C (7 suffix versions) TA = –40 to +125 °C (3 suffix versions) 10 kcycles tRET Data retention 1 kcycle(2) at TA = 85 °C 2. Cycling performed over the whole temperature range. 30 Years 1 kcycle(2) at TA = 105 °C 10 1 kcycle(2) at TA = 125 °C 3 10 kcycle(2) at TA = 55 °C 20 |
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