| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
Toshiba Semiconductor |
10J303
|
291Kb/6P |
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
|
|
10J4B41
|
117Kb/1P |
RECTIFIER STACK (BRIDGE)
|
Nihon Inter Electronics... |
10JDA10
|
40Kb/5P |
DIODE - 1A 100V TJ = 150C
|
SUNMATE electronic Co.,... |
10JDA10
|
305Kb/2P |
AXIAL LEADED SILICON RECTIFIER DIODES
|
National Instruments Co... |
10JDA10
|
141Kb/1P |
Standard Recovery Diode
|
|
10JDA10_2015
|
141Kb/1P |
Standard Recovery Diode
|
Nihon Inter Electronics... |
10JDA20
|
40Kb/5P |
DIDOE - 1A 200V TJ = 150C
|
National Instruments Co... |
10JDA20
|
137Kb/1P |
Standard Recovery Diode
|
|
10JDA20_2015
|
137Kb/1P |
Standard Recovery Diode
|
Nihon Inter Electronics... |
10JDA40
|
40Kb/5P |
DIODE - 1A 400V TJ = 150C
|
SUNMATE electronic Co.,... |
10JDA40
|
291Kb/2P |
AXIAL LEADED SILICON RECTIFIER DIODES
|
National Instruments Co... |
10JDA40
|
137Kb/1P |
Standard Recovery Diode
|
|
10JDA40_2015
|
137Kb/1P |
Standard Recovery Diode
|
Nihon Inter Electronics... |
10JDA60
|
40Kb/5P |
DIODE - 1A 600V TJ = 150C
|
National Instruments Co... |
10JDA60
|
137Kb/1P |
Standard Recovery Diode
|
|
10JDA60_2015
|
137Kb/1P |
Standard Recovery Diode
|
M-System Co.,Ltd. |
10JDL
|
134Kb/3P |
High-density Signal Conditioners 10-RACK
|
|
10JF
|
103Kb/3P |
High-density Signal Conditioners 10-RACK
|
|
10JF-660-R
|
103Kb/3P |
High-density Signal Conditioners 10-RACK
|
|
10JF-660-R/1
|
103Kb/3P |
High-density Signal Conditioners 10-RACK
|
Italian ▼ 
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand