30J58ND Scheda tecnica, PDF

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Produttore elettronici

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Yellow Stone Corp	BM-30J58ND	155Kb/1P	Single Color 5x8 Dot Matrix Displays

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Ohmite Mfg. Co.	30J50R	236Kb/3P	High Energy Wirewound
Ohmite Mfg. Co.	30J100	236Kb/3P	High Energy Wirewound
Toshiba Semiconductor	30J101	193Kb/6P	Silicon N Channel IGBT High Power Switching Applications
	30J121	294Kb/6P	TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
	30J122	498Kb/6P	4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING
	30J122A	199Kb/7P	Dedicated to Current-Resonant Inverter Switching Applications Dedicated to Partial-Switching Power Factor rrection (PFC) Applications
	30J124	1Mb/73P	Bipolar Small-Signal Transistors
	30J126	1Mb/73P	Bipolar Small-Signal Transistors
AG Electronica	30J127	226Kb/2P	MOSFET 600V 200A IGBT
Ohmite Mfg. Co.	30J150	236Kb/3P	High Energy Wirewound
	30J15R	236Kb/3P	High Energy Wirewound
	30J27R	236Kb/3P	High Energy Wirewound
Vishay Siliconix	30J2C000	133Kb/7P	Axial Vitreous Leaded Wirewound Resistors 28-Mar-17
Ohmite Mfg. Co.	30J2R0	236Kb/3P	High Energy Wirewound
Toshiba Semiconductor	30J301	329Kb/6P	N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
	30J311	328Kb/6P	N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
	30J322	257Kb/5P	N CHANNEL MOS TYPE ( THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS)
Ohmite Mfg. Co.	30J33R	236Kb/3P	High Energy Wirewound
Vishay Siliconix	30J4B000	133Kb/7P	Axial Vitreous Leaded Wirewound Resistors 28-Mar-17
Vishay Siliconix	30J4C000	133Kb/7P	Axial Vitreous Leaded Wirewound Resistors 28-Mar-17

30J58ND Scheda tecnica, PDF

30J58ND Datasheet ,PDF

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