IRFP064VPBF
AI

## Overview of IRFP064VPBF
The **IRFP064VPBF** is a high-power N-Channel enhancement mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon (formerly International Rectifier). It is primarily designed for high-speed switching and power conversion applications.
---
### 1. Key Technical Specifications
The following table outlines the absolute maximum ratings and primary characteristics of the device:
| Parameter | Symbol | Typical Value | Unit |
| :--- | :--- | :--- | :--- |
| **Drain-to-Source Voltage** | $V_{DSS}$ | 60 | Volts |
| **Continuous Drain Current** | $I_D$ | 110* | Amperes |
| **Static Drain-to-Source On-Resistance** | $R_{DS(on)}$ | 0.0055 (5.5mΩ) | Ohms |
| **Total Gate Charge** | $Q_g$ | 170 | nC |
| **Power Dissipation** | $P_D$ | 250 | Watts |
| **Operating Temperature** | $T_j$ | -55 to +175 | °C |
*\*Note: Current may be limited by the package type; always refer to thermal dissipation limits.*
---
### 2. Physical Characteristics
- **Package Type:** TO-247AC. This is a through-hole package designed for high power dissipation, often requiring a heatsink.
- **Lead Finish:** "PBF" indicates that the part is **Lead-Free (Pb-Free)** and RoHS compliant.
- **Pinout:**
1. **Gate (G):** Controls the switching of the MOSFET.
2. **Drain (D):** The output terminal connected to the load.
3. **Source (S):** Typically connected to the ground or negative rail.
---
### 3. Core Features and Benefits
- **Ultra-Low On-Resistance:** The 5.5mΩ resistance minimizes power loss due to heat during the "ON" state, increasing efficiency.
- **High Speed:** Optimized for fast switching, making it suitable for high-frequency PWM (Pulse Width Modulation) circuits.
- **Ruggedness:** Fully avalanche rated, meaning it can handle transient voltage spikes without immediate failure.
- **Logic Level Compatibility:** While best driven at 10V, it can begin conducting at lower gate voltages.
---
### 4. Typical Applications
The IRFP064VPBF is commonly found in the following electronic circuits:
1. **DC Motor Control:** Used in H-Bridge configurations for heavy-duty motors.
2. **Inverters:** Converting DC battery power to AC power.
3. **SMPS (Switched-Mode Power Supplies):** Acting as the main switching element for high-current power bricks.
4. **Uninterruptible Power Supplies (UPS):** High-current battery switching.
5. **Solar Charge Controllers:** Managing the high current coming from solar panels.
---
### 5. Simple Implementation Example (Pseudo-Circuit)
To turn the MOSFET on, a voltage ($V_{GS}$) must be applied between the Gate and Source.
```cpp
// Logic for driving a Gate Driver for the IRFP064V
if (Current_Demand > 0) {
digitalWrite(GATE_DRIVER_PIN, HIGH); // Output 10V to Gate
} else {
digitalWrite(GATE_DRIVER_PIN, LOW); // Pull Gate to Ground (0V)
}
```
---
- ⤷
What are the recommended heat sinking strategies for a 110A load on this MOSFET?
- ⤷ How does the IRFP064VPBF compare to the IRF3205 in high-power applications?
- ⤷ What is the maximum gate-to-source voltage (Vgs) before the device is damaged?