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  • PE3992

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    The **PE3992** is a high-performance, radiation-hardened (Rad-Hard) N-channel enhancement mode Power MOSFET manufactured by **pSemi** (formerly Peregrine Semiconductor). It is specifically designed for space and defense applications where reliability in extreme environments is critical. --- ### ## Technical Specifications Overview The PE3992 is built using **UltraCMOS® technology** on a sapphire substrate (Silicon on Sapphire - SOS), which provides inherent radiation immunity compared to bulk silicon devices. | Parameter | Specification | | :--- | :--- | | **Technology** | UltraCMOS® (Silicon on Sapphire) | | **Drain-Source Voltage ($V_{DS}$)** | 100V | | **Continuous Drain Current ($I_D$)** | ~2.5A to 3.0A (depending on thermal management) | | **Gate-Source Voltage ($V_{GS}$)** | -20V to +20V | | **On-Resistance ($R_{DS(on)}$)** | Low (optimized for switching efficiency) | | **Package Type** | Hermetic ceramic packages (typically 8-lead CFP or similar) | --- ### ## Key Electronic Features ### 1. Radiation Hardness The most significant aspect of the PE3992 is its resilience to the space environment: * **Total Ionizing Dose (TID):** Resistant to high levels of radiation (often rated up to 100 krad or higher). * **Single Event Effects (SEE):** Immune to Single Event Latch-up (SEL) due to the insulating sapphire substrate, which eliminates the parasitic bipolar structures found in bulk silicon. ### 2. High-Speed Switching Because of the UltraCMOS process, the device exhibits very low gate charge ($Q_g$) and low output capacitance ($C_{oss}$). This allows for: * Reduced switching losses. * High-frequency operation in DC-DC converters. ### 3. Thermal Stability The device is designed to operate across a wide military temperature range (typically **-55°C to +125°C**), maintaining consistent $R_{DS(on)}$ characteristics even under thermal stress. --- ### ## Typical Applications The PE3992 is primarily found in the power distribution systems of aerospace hardware: * **Satellite Bus Power:** Used in power management and distribution units (PMDU). * **Point-of-Load (POL) Converters:** High-efficiency voltage regulation for FPGAs and CPUs in space. * **Motor Control:** Driving actuators in robotic arms or satellite positioning gimbals. * **Solid State Relays:** Used as a high-reliability electronic switch. --- ### ## Comparison: UltraCMOS vs. Standard MOSFETs ```markdown Standard Silicon MOSFET: - Susceptible to Latch-up. - High parasitic capacitance. - Higher risk of radiation-induced leakage. PE3992 (UltraCMOS): - Fully isolated (Sapphire substrate). - Zero latch-up risk. - Superior performance-to-size ratio for space. ```
    ✨ Follow-up Questions
    • What are the specific Total Ionizing Dose (TID) ratings for the PE3992?
    • How does the Silicon on Sapphire (SOS) structure prevent Single Event Latch-up?
    • What are the recommended gate drive voltages for optimal performance in the PE3992?