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  • UT2316G-AE3-R

  • AI
    The **UT2316G-AE3-R** is a specific N-channel enhancement mode Field Effect Transistor (MOSFET) manufactured by UTC (Unisonic Technologies). It is designed for high-density cell designs and low-voltage applications. --- ### 1. General Specifications Below are the primary electrical characteristics of the UT2316G-AE3-R: | Parameter | Specification | Description | | :--- | :--- | :--- | | **Drain-Source Voltage ($V_{DSS}$)** | 30V | Maximum voltage across drain and source. | | **Gate-Source Voltage ($V_{GSS}$)** | ±12V | Maximum voltage allowed on the gate. | | **Continuous Drain Current ($I_D$)** | 3.6A | Maximum current at $T_A = 25°C$. | | **Drain-Source On-Resistance ($R_{DS(ON)}$)** | < 60mΩ | Resistance when the device is fully ON (@ $V_{GS}=10V$). | | **Package Type** | SOT-23 | Small Outline Transistor (3-lead). | | **Halogen Free** | Yes (G suffix) | Part of UTC's "Green" product line. | --- ### 2. Part Number Breakdown The nomenclature of the part reveals its specific configuration: * **UT2316**: The base model/series number. * **G**: Stands for Halogen-Free and Lead-Free (Green). * **AE3**: Denotes the **SOT-23** package type. * **R**: Indicates the packing type (**Tape & Reel**). --- ### 3. Key Electronic Features * **Low On-Resistance**: The low $R_{DS(ON)}$ minimizes power dissipation during the "on" state, making it efficient for battery-powered devices. * **Low Threshold Voltage**: This MOSFET can be driven by low-voltage logic circuits (Microcontrollers/ASICs). * **Fast Switching**: Optimized for high-speed switching applications. * **Trench Technology**: Uses advanced trench cell design to achieve high power and current handling in a small footprint. --- ### 4. Typical Applications The UT2316G-AE3-R is commonly found in: 1. **Power Management**: Load switches in portable electronics (smartphones, tablets). 2. **DC/DC Converters**: Small-scale voltage regulation. 3. **Battery Protection**: Used in BMS circuits for small Li-ion battery packs. 4. **LED Drivers**: Switching control for LED strips or backlighting. --- ### 5. Pin Configuration (SOT-23) ```text (Top View) ____ 1 | | G ----| |---- 3 D 2 |____| | S 1. Gate (G) 2. Source (S) 3. Drain (D) ```
    ✨ Follow-up Questions
    • ⤷What is the maximum power dissipation (Pd) for this MOSFET in an SOT-23 package?
    • ⤷ How does the RDS(on) change if the Gate-Source voltage is lowered to 4.5V?
    • ⤷ Are there P-channel equivalents produced by UTC for complementary circuits?