UT2316G-AE3-R
AI

The **UT2316G-AE3-R** is a specific N-channel enhancement mode Field Effect Transistor (MOSFET) manufactured by UTC (Unisonic Technologies). It is designed for high-density cell designs and low-voltage applications.
---
### 1. General Specifications
Below are the primary electrical characteristics of the UT2316G-AE3-R:
| Parameter | Specification | Description |
| :--- | :--- | :--- |
| **Drain-Source Voltage ($V_{DSS}$)** | 30V | Maximum voltage across drain and source. |
| **Gate-Source Voltage ($V_{GSS}$)** | ±12V | Maximum voltage allowed on the gate. |
| **Continuous Drain Current ($I_D$)** | 3.6A | Maximum current at $T_A = 25°C$. |
| **Drain-Source On-Resistance ($R_{DS(ON)}$)** | < 60mΩ | Resistance when the device is fully ON (@ $V_{GS}=10V$). |
| **Package Type** | SOT-23 | Small Outline Transistor (3-lead). |
| **Halogen Free** | Yes (G suffix) | Part of UTC's "Green" product line. |
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### 2. Part Number Breakdown
The nomenclature of the part reveals its specific configuration:
* **UT2316**: The base model/series number.
* **G**: Stands for Halogen-Free and Lead-Free (Green).
* **AE3**: Denotes the **SOT-23** package type.
* **R**: Indicates the packing type (**Tape & Reel**).
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### 3. Key Electronic Features
* **Low On-Resistance**: The low $R_{DS(ON)}$ minimizes power dissipation during the "on" state, making it efficient for battery-powered devices.
* **Low Threshold Voltage**: This MOSFET can be driven by low-voltage logic circuits (Microcontrollers/ASICs).
* **Fast Switching**: Optimized for high-speed switching applications.
* **Trench Technology**: Uses advanced trench cell design to achieve high power and current handling in a small footprint.
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### 4. Typical Applications
The UT2316G-AE3-R is commonly found in:
1. **Power Management**: Load switches in portable electronics (smartphones, tablets).
2. **DC/DC Converters**: Small-scale voltage regulation.
3. **Battery Protection**: Used in BMS circuits for small Li-ion battery packs.
4. **LED Drivers**: Switching control for LED strips or backlighting.
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### 5. Pin Configuration (SOT-23)
```text
(Top View)
____
1 | |
G ----| |---- 3 D
2 |____|
|
S
1. Gate (G)
2. Source (S)
3. Drain (D)
```
- ⤷What is the maximum power dissipation (Pd) for this MOSFET in an SOT-23 package?
- ⤷ How does the RDS(on) change if the Gate-Source voltage is lowered to 4.5V?
- ⤷ Are there P-channel equivalents produced by UTC for complementary circuits?