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CZT32C Datasheet with Chat AI
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  • Part No.CZT32C
    ManufacturerSECOS
    Size342 Kbytes
    Pages2 pages
    DescriptionPNP Silicon Medium Power Transistor
    Datasheet Summary with AI

    Here's a summary of the provided text, extracting key information:

    Document Type: Datasheet for a silicon NPN power transistor.

    Part Number: CZT32C

    Manufacturer: (Implied, based on website) SeCoS

    Key Specifications:

    ️· Voltage:
    - Collector-Base Voltage (VCBO): -100V
    - Collector-Emitter Voltage (VCEO): -100V
    - Emitter-Base Voltage (VEBO): -5V
    ️· Current:
    - Collector Current (IC): -3A (Continuous)
    ️· Power Dissipation: -1W
    ️· Temperature:
    - Junction Temperature (TJ): 150°C
    - Storage Temperature Range (TSTG): -65°C to +150°C

    ️· Frequency: Transition Frequency (fT): 3 MHz

    Key Parameters (Typical/Min/Max Values):

    ️· DC Current Gain (hFE): Varies between 25 and 100 depending on test conditions.
    ️· Saturation Voltage (VCE(sat)): -1.2V
    ️· Base-Emitter Voltage (VBE(on)): -1.8V

    Other Information:

    ️· Date: 15-May-2017
    ️· Revision: A
    ️· Website: [http://www.SeCoS.de](http://www.SeCoS.de)
    ️· Disclaimer: SeCoS reserves the right to change specifications without notice.

    In essence, this document details the electrical characteristics and limitations of the CZT32C NPN transistor, providing engineers with the data needed to design circuits utilizing this component.

    Document Type: Datasheet for a silicon NPN power transistor.

    Part Number: CZT32C

    Manufacturer: (Implied, based on website) SeCoS

    Key Specifications:

    ️· Voltage:
    - Collector-Base Voltage (VCBO): -100V
    - Collector-Emitter Voltage (VCEO): -100V
    - Emitter-Base Voltage (VEBO): -5V
    ️· Current:
    - Collector Current (IC): -3A (Continuous)
    ️· Power Dissipation: -1W
    ️· Temperature:
    - Junction Temperature (TJ): 150°C
    - Storage Temperature Range (TSTG): -65°C to +150°C
    ️· Frequency: Transition Frequency (fT): 3 MHz

    Key Parameters (Typical/Min/Max Values):

    ️· DC Current Gain (hFE): Varies between 25 and 100 depending on test conditions.
    ️· Saturation Voltage (VCE(sat)): -1.2V
    ️· Base-Emitter Voltage (VBE(on)): -1.8V

    Other Information:

    ️· Date: 15-May-2017
    ️· Revision: A
    ️· Website: [http://www.SeCoS.de](http://www.SeCoS.de)
    ️· Disclaimer: SeCoS reserves the right to change specifications without notice.

    In essence, this document details the electrical characteristics and limitations of the CZT32C NPN transistor, providing engineers with the data needed to design circuits utilizing this component.

    Part No.CZT32C
    ManufacturerSECOS
    Size342 Kbytes
    Pages2 pages
    DescriptionPNP Silicon Medium Power Transistor
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