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CZT32C Scheda tecnica(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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CZT32C Scheda tecnica(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page ![]() Elektronische Bauelemente CZT32C -3A, -100V P P Silicon Medium Power Transistor 15-May-2017 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Complementary to CZT31C Power amplifier applications up to 3 Amps. MARKING CZT32C PACKAGE INFORMATION Package MPQ Leader Size SOT-223 2.5K 13 inch ABSOLUTE MAXIMUM RATINGS (T A = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -100 V Emitter-Base Voltage VEBO -5 V Collector Current-Continuous IC -3 A Collector Power Dissipation PD -1 W Junction and Storage Temperature TJ, TSTG 150, -65~150 °C ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO -100 - - V IC= -1mA , IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO -100 - - V IC= -30mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO -5 - - V IC=0, IE= -3mA Collector Cut-off Current ICBO - - -200 uA VCB= -100V, IE=0 Base Cut-off Current ICEO - - -300 uA VCE= -60V, IB=0 Emitter Cut-off Current IEBO - - -1 mA VEB= -5V, IC=0 hFE(1) 25 - - VCE= -4V, IC= -1A DC Current Gain 1 hFE(2) 10 - 100 VCE= -4V, IC= -3A Collector-Emitter Saturation Voltage 1 VCE(sat) - - -1.2 V IC= -3A, IB= -375mA Base-Emitter Voltage 1 VBE(on) - - -1.8 V VCE= -4V, IC= -3A Transition Frequency fT 3 - - MHz VCE= -10V, IC= -0.5A, f=1MHz Note: 1. Pulsed, 2%D.C. Top View 1 2 3 4 A M B D L K F G H J E C SOT-223 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 5.90 6.70 G - 0.18 B 6.70 7.30 H 2.00 REF. C 3.30 3.80 J 0.20 0.40 D 1.42 1.90 K 1.10 REF. E 4.45 4.75 L 2.30 REF. F 0.60 0.85 M 2.80 3.20 |
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