# DAM100N40C

## Overview

N-Channel Enhancement Mode MOSFET designed for various applications including backlighting, synchronous rectifiers, and power conversion. Pb Free & RoHS Compliant.

## Features

· V DSS = 40V
· R DS(ON) Typ. 4.2mΩ @ V GS = 10V
· Fully Avalanche Rated
· Pb Free & RoHS Compliant

## Applications

· Backlighting
· Power Conversion
· Synchronous Rectifiers

## Absolute Maximum Ratings

Parameter	Symbol	Ratings	Unit
Drain Source Voltage	VDS	40	V
Gate Source Voltage	VGS	±20	V
Drain Current Continuous @ 25°C	ID	100	A
Drain Current Continuous @ 100°C	ID	63	A
Drain Current Pulsed	IDM	400	A
Maximum Power Dissipation	PD	121	W
Storage Temperature Range	TSTG	-55 to +150	°C
Operating Junction Temperature Range	TJ	-55 to +150	°C
Thermal Resistance Junction to Case	RθJC	1.03	°C/W

## Electrical Characteristics

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Drain-Source Breakdown Voltage	BVDSS	VGS=0V, IDS=250uA	40			V
Zero Gate Voltage Drain Current	IDSS	VGS=0V, VDS=40V		-	-	uA
Gate-Body Leakage	IGSS	VGS=±20V, VDS=0V		-	-	nA
Gate Threshold Voltage	VTH	VDS=VGS, IDS=250uA	1.2	1.6	2	V
Static Drain-Source On-Resistance	RDS(on)	VGS=10V, IDS=20A	-	4.2	5.5	mΩ
Input Capacitance	Ciss	VDS=25V, VGS=0V, Freq.=1MHz	-	2410	3600	pF
Output Capacitance	Coss		-	233	400	pF
Reverse Transfer Capacitance	Crss		-	152	230	pF
Turn-On Delay Time	Td(on)	VDD=20V, VGS=10V, RG =3.3Ω, IDS=1A	-	14.2	28	ns
Diode Forward Voltage	VSD	VGS=0V, IS=1A	-	-	1	V

## Notes

· Pulse test conditions: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
· RJA is dependent on PCB design.