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DAM100N40C Scheda tecnica(PDF) 1 Page - DACO SEMICONDUCTOR CO.,LTD. |
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DAM100N40C Scheda tecnica(HTML) 1 Page - DACO SEMICONDUCTOR CO.,LTD. |
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1 / 4 page  N-Channel Enhancement Mode MOSFET Features VDSS = 40V RDS(ON) Typ.4.2mΩ @ VGS = 10V Fully Avalanche Rated Pb Free & RoHS Compliant Applications Backlighting Synchronous Rectifiers Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Parameter Symbol Ratings Unit Drain Source Voltage VDS 40 V Gate Source Voltage VGS ±20 V Drain Current Continuous @ TC = 25°C ID 100 A @ TC = 100°C 63 Drain Current Pulsed@ TC = 25°C IDM 400 A Maximum Power Dissipation PD 121 W Storage Temperature Range TSTG -55 to +150 °C Operating Junction Temperature Range TJ -55 to +150 °C Thermal Resistance Junction to Case RθJC 1.03 °C/W DAM100N40C |
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