| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
 Motorola, Inc |
1N821
|
36Kb / 4P |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW
|
 Microsemi Corporation |
1N4678
|
48Kb / 1P |
SILICON 250 mW ZENER DIODES
|
|
1N5221-1
|
102Kb / 3P |
SILICON 500 mW ZENER DIODES
|
|
1N5728
|
53Kb / 2P |
SILICON 400 mW ZENER DIODES
|
|
1N746
|
222Kb / 3P |
SILICON 400 mW ZENER DIODES
|
|
1N821-1
|
76Kb / 2P |
6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
|
|
1N821
|
78Kb / 2P |
6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
|
|
1N957B-1
|
92Kb / 2P |
SILICON 500 mW ZENER DIODES
|
|
1N957B
|
87Kb / 2P |
SILICON 400 mW ZENER DIODES
|
 New Jersey Semi-Conduct... |
1N6062B
|
94Kb / 1P |
400 mW low voltage avalanche low noise silicon zener diodes
|