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CG2H40010F Scheda tecnica (PDF) - Cree, Inc
CG2H40010F Datasheet PDF - Cree, Inc
Il numero della parte CG2H40010F
Scarica  CG2H40010F Scarica
Grandezza file   2184.76 Kbytes
Page   14 Pages
Produttore elettronici  CREE [Cree, Inc]
Homepage  http://www.cree.com/
Logo CREE - Cree, Inc
Spiegazioni elettronici 10 W, DC - 6 GHz, RF Power GaN HEMT

CG2H40010F Datasheet (PDF)

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CG2H40010F Datasheet PDF - Cree, Inc

Il numero della parte CG2H40010F
Scarica  CG2H40010F Click to download

Grandezza file   2184.76 Kbytes
Page   14 Pages
Produttore elettronici  CREE [Cree, Inc]
Homepage  http://www.cree.com/
Logo CREE - Cree, Inc
Spiegazioni elettronici 10 W, DC - 6 GHz, RF Power GaN HEMT

CG2H40010F Scheda tecnica (HTML) - Cree, Inc


CG2H40010F Dettagli del prodotto

Cree’s CG2H40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high effciency, high gain and wide bandwidth capabilities making the CG2H40010 ideal for linear and compressed amplifer circuits. The transistor is available in both screw-down, flange and solderdown, pill packages.

FEATURES
• Up to 8 GHz Operation
• 18 dB Small Signal Gain at 2.0 GHz
• 16 dB Small Signal Gain at 4.0 GHz
• 17 W typical PSAT
• 70 % Effciency at PSAT
• 28 V Operation

APPLICATIONS
• 2-Way Private Radio
• Broadband Amplifers
• Cellular Infrastructure
• Test Instrumentation
• Class A, AB, Linear amplifers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms




Codice articolo simile - CG2H40010F

Produttore elettroniciIl numero della parteScheda tecnicaSpiegazioni elettronici
logo
WOLFSPEED, INC.		 CG2H40010 WOLFSPEED-CG2H40010 Datasheet
1Mb / 14P		 10 W, DC - 8 GHz, RF Power GaN HEMT
Rev. 2.0, 2022-7-7
More results


Descrizione simile - CG2H40010F

Produttore elettroniciIl numero della parteScheda tecnicaSpiegazioni elettronici
logo
Cree, Inc		 CGH40010 CREE-CGH40010 Datasheet
948Kb / 12P		 10 W, RF Power GaN HEMT
Rev 1.4
CGH40006P CREE-CGH40006P Datasheet
1Mb / 14P		 6 W, RF Power GaN HEMT
Rev 3.0
CGH40010 CREE-CGH40010_15 Datasheet
1Mb / 15P		 10 W, RF Power GaN HEMT
Rev 4.0
CG2H40045 CREE-CG2H40045 Datasheet
1Mb / 14P		 45 W, DC - 4 GHz RF Power GaN HEMT
logo
WOLFSPEED, INC.		 CG2H40010 WOLFSPEED-CG2H40010 Datasheet
1Mb / 14P		 10 W, DC - 8 GHz, RF Power GaN HEMT
Rev. 2.0, 2022-7-7
CG2H40035 WOLFSPEED-CG2H40035 Datasheet
2Mb / 21P		 35 W, DC - 6 GHz, RF Power GaN HEMT
Rev. 1.0, 2022-7-7
CGH40006P WOLFSPEED-CGH40006P Datasheet
3Mb / 14P		 6 W, RF Power GaN HEMT
Rev. 3.3, 2022-11-1
CGH40010 WOLFSPEED-CGH40010 Datasheet
1Mb / 16P		 10 W, DC - 6 GHz, RF Power GaN HEMT
Rev. 4.4, 2022-10-28
CGH40035 WOLFSPEED-CGH40035 Datasheet
3Mb / 14P		 35 W, DC - 4 GHz, RF Power GaN HEMT
Rev. 4.2, 2022-11-17
CGH40045 WOLFSPEED-CGH40045 Datasheet
4Mb / 15P		 45 W, DC - 4 GHz RF Power GaN HEMT
Rev. 5.0, 2022-8-4
More results




A proposito di Cree, Inc

Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*Queste informazioni sono solo a scopo informativo generale, non saremo responsabili per eventuali perdite o danni causati dalle informazioni di cui sopra.




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