Descripton:
Each device in the OP508F series consists of a NPN silicon phototransistor mounted in a flat, black plastc “end-looking” package. The flat sensing surface allows an acceptance half-angle of 60° when measured from the optcal axis to the half power point.

Features:
• Flat lensed for wide acceptance angle (OP508F)
• Lensed for high sensitvity (OP509)
• Easily stackable on 0.100” (2.54 mm) hole centers
• Inexpensive plastc package
• Mechanically and spectrally matched to OP168 and OP268 series of infrared emitng diodes

Applicatons:
• Applicatons requiring a wide acceptance angle
• Applicatons requiring high sensitvity
• Space-limited applicatons