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AQW212 Scheda tecnica (PDF) - Nais(Matsushita Electric Works)

AQW212 Datasheet PDF - Nais(Matsushita Electric Works)
Il numero della parte AQW212
Scarica  AQW212 Scarica
Grandezza file   46.75 Kbytes
Page   3 Pages
Produttore elettronici  NAIS [Nais(Matsushita Electric Works)]
Homepage  
Logo NAIS - Nais(Matsushita Electric Works)
Spiegazioni elettronici GU (General Use) Type [2-Channel (Form A) Type]

AQW212 Datasheet (PDF)

Go To PDF Page Scarica Scheda tecnica
AQW212 Datasheet PDF - Nais(Matsushita Electric Works)

Il numero della parte AQW212
Scarica  AQW212 Click to download

Grandezza file   46.75 Kbytes
Page   3 Pages
Produttore elettronici  NAIS [Nais(Matsushita Electric Works)]
Homepage  
Logo NAIS - Nais(Matsushita Electric Works)
Spiegazioni elettronici GU (General Use) Type [2-Channel (Form A) Type]

AQW212 Scheda tecnica (HTML) - Nais(Matsushita Electric Works)


AQW212 Dettagli del prodotto

FEATURES

1. Compact 8-pin DIP size

The device comes in a compact (W) 6.4 × (L) 9.78 ×(H) 3.9 mm (W) .252×(L) .385×(H) .154 inch, 8-pin DIP size (through hole terminal type).

2. Applicable for 2 Form A use as well as two independent 1 Form A use

3. Controls low-level analog signals

PhotoMOS relays feature extremely low closed-circuit offset voltage to enable control of low-level analog signals without distortion.

4. High sensitivity, high speed response

Can control a maximum 0.13 A load current with a 5 mA input current. Fast operation speed of 310 µs (typical). (AQW214)

5. Low-level off state leakage current

The SSR has an off state leakage current of several milliamperes whereas the PhotoMOS relays has only 100 pA even with the rated load voltage of 400 V(AQW214).

6. Low-level thermal electromotive force (Approx. 1 µV)

7. Eliminates the need for a counter electromotive force protection diode in the drive circuits on the input side

8. Stable ON resistance.

9. Eliminates the need for a power supply to drive the power MOSFET




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