PXAC201602FC Scheda tecnica(PDF) - Cree, Inc

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PXAC201602FC Scheda tecnica (PDF) - Cree, Inc

PXAC201602FC Datasheet PDF - Cree, Inc


Il numero della parte	PXAC201602FC

Scarica	PXAC201602FC Scarica

Grandezza file	529.35 Kbytes

Page	9 Pages

Produttore elettronici	CREE [Cree, Inc]

Homepage	http://www.cree.com/

Logo

Spiegazioni elettronici

Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 - 1920 MHz, 2010 - 2025 MHz

PXAC201602FC Datasheet (PDF)

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Scarica Scheda tecnica

PXAC201602FC Datasheet PDF - Cree, Inc


Il numero della parte	PXAC201602FC

Scarica	PXAC201602FC Click to download

Grandezza file	529.35 Kbytes

Page	9 Pages

Produttore elettronici	CREE [Cree, Inc]

Homepage	http://www.cree.com/

Logo

Spiegazioni elettronici	Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 - 1920 MHz, 2010 - 2025 MHz

PXAC201602FC Scheda tecnica (HTML) - Cree, Inc

PXAC201602FC Datasheet HTML 1Page - Cree, Inc

PXAC201602FC Datasheet HTML 2Page - Cree, Inc

PXAC201602FC Datasheet HTML 3Page - Cree, Inc

PXAC201602FC Datasheet HTML 4Page - Cree, Inc

PXAC201602FC Datasheet HTML 5Page - Cree, Inc

PXAC201602FC Datasheet HTML 6Page - Cree, Inc

PXAC201602FC Datasheet HTML 7Page - Cree, Inc

PXAC201602FC Datasheet HTML 8Page - Cree, Inc

PXAC201602FC Datasheet HTML 9Page - Cree, Inc

Codice articolo simile - PXAC201602FC

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Infineon Technologies A...	PXAC201602FC	402Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 ??1920 MHz, 2010 ??2025 MHz Rev. 04.1, 2016-07-19
	PXAC201602FCV1R0	402Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 ??1920 MHz, 2010 ??2025 MHz Rev. 04.1, 2016-07-19
	PXAC201602FCV1R0XTMA1	402Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 ??1920 MHz, 2010 ??2025 MHz Rev. 04.1, 2016-07-19
	PXAC201602FCV1R250	402Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 ??1920 MHz, 2010 ??2025 MHz Rev. 04.1, 2016-07-19
	PXAC201602FCV1R250XTMA1	402Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 ??1920 MHz, 2010 ??2025 MHz Rev. 04.1, 2016-07-19

Descrizione simile - PXAC201602FC

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Infineon Technologies A...	PXFC193808SV	196Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 380 W, 28 V, 1805 ??1880 MHz Rev. 02.1, 2015-01-13
	PXAC203302FV	1Mb / 8P	Thermally-Enhanced High Power RF LDMOS FET 330 W, 28 V, 1880 ??2025 MHz Rev. 02.1, 2016-06-22
	PXAC201602FC	402Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 ??1920 MHz, 2010 ??2025 MHz Rev. 04.1, 2016-07-19
	PXAC182002FC	1Mb / 8P	Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 ??1880 MHz Rev. 02.3, 2016-06-17
	PXAD184218FV	339Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 420 W, 28 V, 1805 ??1880 MHz Rev. 02.1, 2016-12-07
Cree, Inc	PXAE184408NB	1Mb / 6P	Thermally-Enhanced High Power RF LDMOS FET 450 W, 28 V, 1805 ??1880 MHz
	PXAC182002FC	495Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 ??1880 MHz
	PTFB181702FC	554Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 170 W, 28 V, 1805 ??1880 MHz
	PXAC203302FV	436Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 330 W, 28 V, 1880 - 2025 MHz
	PXFE181507FC	550Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 175 W, 28 V, 1805 ??1880 MHz

A proposito di Cree, Inc

Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*Queste informazioni sono solo a scopo informativo generale, non saremo responsabili per eventuali perdite o danni causati dalle informazioni di cui sopra.

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