Description
Process
The 5-GHz power amplifier is designed using Atmel’s Silicon-Germanium (SiGe) process and provides excellent noise performance as well as good power-added efficiency.

Circuitry
The PA consists of a 2-stage amplifier with a maximum output power of 28 dBm. The output stages were realized using an open-collector structure. The IC features 50-Ω input matching. Power-up/down and output level are controlled at bias control pin 6 (VCTL).

Features
• Frequency Range 5 GHz to 6 GHz
• POUT Maximum 28 dBm
• Gain Typically 19 dB
• VCC 3.0 V to 3.9 V
• Package: QFN16
• Current Consumption in Power Down Mode Typically ≤15 µA

Benefits
• Biasing Control Extends Battery Life Time
• Simple Input and Output Matching
• One Single Supply Voltage Required