2SC3603 Scheda tecnica(PDF) - eleflow technologies co., ltd.

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2SC3603 Scheda tecnica (PDF) - eleflow technologies co., ltd.

2SC3603 Datasheet PDF - eleflow technologies co., ltd.


Il numero della parte	2SC3603

Scarica	2SC3603 Scarica

Grandezza file	222.25 Kbytes

Page	4 Pages

Produttore elettronici	ELEFLOW [eleflow technologies co., ltd.]

Homepage	http://www.eleflow.com/

Logo

Spiegazioni elettronici

NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION

2SC3603 Datasheet (PDF)

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2SC3603 Datasheet PDF - eleflow technologies co., ltd.


Il numero della parte	2SC3603

Scarica	2SC3603 Click to download

Grandezza file	222.25 Kbytes

Page	4 Pages

Produttore elettronici	ELEFLOW [eleflow technologies co., ltd.]

Homepage	http://www.eleflow.com/

Logo

Spiegazioni elettronici	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION

2SC3603 Scheda tecnica (HTML) - eleflow technologies co., ltd.

2SC3603 Datasheet HTML 1Page - eleflow technologies co., ltd.

2SC3603 Datasheet HTML 2Page - eleflow technologies co., ltd.

2SC3603 Datasheet HTML 3Page - eleflow technologies co., ltd.

2SC3603 Datasheet HTML 4Page - eleflow technologies co., ltd.

2SC3603 Dettagli del prodotto

NPN EPITAXIAL SILICON TRANSISTOR
FOR MICROWAVE LOW-NOISE AMPLIFICATION

The 2SC3603 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 4.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range.

FEATURES
• Low noise : NF = 2.1 dB TYP. @ f = 2.0 GHz
• High power gain : GA = 10 dB TYP. @ f = 2.0 GHz

Codice articolo simile - 2SC3603

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
NEC	2SC3603	89Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
Renesas Technology Corp	2SC3603	214Kb / 10P	SILICON TRANSISTOR 1995

Descrizione simile - 2SC3603

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
NEC	2SC3587	91Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
	2SC3603	89Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
	2SC3604	94Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
	2SC5177	56Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5180	54Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5185	60Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5369	72Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION
New Jersey Semi-Conduct...	2SC3604	198Kb / 2P	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
California Eastern Labs	NE68719	189Kb / 5P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR LOW-NOISE MICROWAVE AMPLIFICATION FOR LOW-NOISE MICROWAVE AMPLIFICATION
California Eastern Labs	2SC3356	1Mb / 9P	NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold

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