| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
 Excelliance MOS Corp. |
EMB99A0G
|
217Kb / 8P |
2N & 2P?륝hannel Logic Level Enhancement Mode Field Effect Transistor
|
|
EMD06N10E
|
231Kb / 6P |
N?륝hannel Logic Level Enhancement Mode Field Effect Transistor
|
|
EMD06N80F
|
173Kb / 5P |
N?륝hannel Logic Level Enhancement Mode Field Effect Transistor
|
|
EMD08N10E
|
231Kb / 6P |
N?륝hannel Logic Level Enhancement Mode Field Effect Transistor
|
|
EMD08N80F
|
172Kb / 5P |
N?륝hannel Logic Level Enhancement Mode Field Effect Transistor
|
|
EMD10N06A
|
224Kb / 6P |
N?륝hannel Logic Level Enhancement Mode Field Effect Transistor
|
|
EMD10N06E
|
230Kb / 5P |
N?륝hannel Logic Level Enhancement Mode Field Effect Transistor
|
|
EMD10N70F
|
170Kb / 5P |
N?륝hannel Logic Level Enhancement Mode Field Effect Transistor
|
|
EMD12N06A
|
224Kb / 6P |
N?륝hannel Logic Level Enhancement Mode Field Effect Transistor
|
|
EMD12N10H
|
215Kb / 6P |
N?륝hannel Logic Level Enhancement Mode Field Effect Transistor
|