2110-2170 MHz, 44 W AVG., 28 V 2 x W-CDMA LATERAL N-CHANNEL RF POWER MOSFET

Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications.

• Typical 2-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1900 mA, Pout = 44 Watts Avg., f = 2112.5 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
   Power Gain — 15.5 dB
   Drain Efficiency — 26.5%
   IM3 @ 10 MHz Offset — -37 dBc in 3.84 MHz Channel Bandwidth
   ACPR @ 5 MHz Offset — -40 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 190 Watts CW Output Power

Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.

CASE 375D-05, STYLE 1 NI-1230