GTVA107001EC-V1-R0 Scheda tecnica(PDF) - Cree, Inc

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GTVA107001EC-V1-R0 Scheda tecnica (PDF) - Cree, Inc

GTVA107001EC-V1-R0 Datasheet PDF - Cree, Inc


Il numero della parte	GTVA107001EC-V1-R0

Scarica	GTVA107001EC-V1-R0 Scarica

Grandezza file	253.63 Kbytes

Page	8 Pages

Produttore elettronici	CREE [Cree, Inc]

Homepage	http://www.cree.com/

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Spiegazioni elettronici

Thermally-Enhanced High Power RF GaN on SiC HEMT 700 W, 50 V, 960 ??1215 MHz

GTVA107001EC-V1-R0 Datasheet (PDF)

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GTVA107001EC-V1-R0 Datasheet PDF - Cree, Inc


Il numero della parte	GTVA107001EC-V1-R0

Scarica	GTVA107001EC-V1-R0 Click to download

Grandezza file	253.63 Kbytes

Page	8 Pages

Produttore elettronici	CREE [Cree, Inc]

Homepage	http://www.cree.com/

Logo

Spiegazioni elettronici	Thermally-Enhanced High Power RF GaN on SiC HEMT 700 W, 50 V, 960 ??1215 MHz

GTVA107001EC-V1-R0 Scheda tecnica (HTML) - Cree, Inc

GTVA107001EC-V1-R0 Datasheet HTML 1Page - Cree, Inc

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GTVA107001EC-V1-R0 Datasheet HTML 6Page - Cree, Inc

GTVA107001EC-V1-R0 Datasheet HTML 7Page - Cree, Inc

GTVA107001EC-V1-R0 Datasheet HTML 8Page - Cree, Inc

Codice articolo simile - GTVA107001EC-V1-R0

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
WOLFSPEED, INC.	GTVA107001EC-V1-R0	638Kb / 8P	High Power RF GaN on SiC HEMT 700 W, 50 V, DC - 1.4 GHz Rev. 3.1, 2021-10-14

Descrizione simile - GTVA107001EC-V1-R0

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Cree, Inc	GTVA101K42EV	1Mb / 4P	Thermally-Enhanced High Power RF GaN on SiC HEMT 1400 W, 50 V, 960 ??1215 MHz
	GTVA104001FA	314Kb / 4P	Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 50 V, 960 ??1215 MHz
	GTVA126001EC	615Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 600 W, 50 V, 1200 ??1400 MHz
	GTVA220701FA	581Kb / 10P	Thermally-Enhanced High Power RF GaN on SiC HEMT 70 W, 50 V, 1805 ??2170 MHz
	GTVA261701FA	591Kb / 10P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 ??2690 MHz
	GTVA126001EFC	615Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 600 W, 50 V, 1200 ??1400 MHz
WOLFSPEED, INC.	GTRA360502M-V1	844Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 50 W, 48 V, 3400 – 3800 MHz Rev. 04, 2023-06-27
	GTVA220701FA_V1	736Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 70 W, 50 V, 1805 – 2170 MHz Rev. 05.1, 2022-1-27
	GTRA260502M	762Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 50 W, 48 V, 2515 – 2675 MHz Rev. 04. 2023-06-26
	GTVA220701FA	736Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 70 W, 50 V, 1805 – 2170 MHz Rev. 05.1, 2022-1-27

A proposito di Cree, Inc

Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*Queste informazioni sono solo a scopo informativo generale, non saremo responsabili per eventuali perdite o danni causati dalle informazioni di cui sopra.

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