PXAE263708NB-V1-R2 Scheda tecnica(PDF) - Cree, Inc

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PXAE263708NB-V1-R2 Scheda tecnica (PDF) - Cree, Inc

PXAE263708NB-V1-R2 Datasheet PDF - Cree, Inc


Il numero della parte	PXAE263708NB-V1-R2

Scarica	PXAE263708NB-V1-R2 Scarica

Grandezza file	289.18 Kbytes

Page	9 Pages

Produttore elettronici	CREE [Cree, Inc]

Homepage	http://www.cree.com/

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Spiegazioni elettronici

Thermally-Enhanced High Power RF LDMOS FET 400 W (P3dB), 28 V, 2620 ??2690 MHz

PXAE263708NB-V1-R2 Datasheet (PDF)

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PXAE263708NB-V1-R2 Datasheet PDF - Cree, Inc


Il numero della parte	PXAE263708NB-V1-R2

Scarica	PXAE263708NB-V1-R2 Click to download

Grandezza file	289.18 Kbytes

Page	9 Pages

Produttore elettronici	CREE [Cree, Inc]

Homepage	http://www.cree.com/

Logo

Spiegazioni elettronici	Thermally-Enhanced High Power RF LDMOS FET 400 W (P3dB), 28 V, 2620 ??2690 MHz

PXAE263708NB-V1-R2 Scheda tecnica (HTML) - Cree, Inc

PXAE263708NB-V1-R2 Datasheet HTML 1Page - Cree, Inc

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PXAE263708NB-V1-R2 Datasheet HTML 7Page - Cree, Inc

PXAE263708NB-V1-R2 Datasheet HTML 8Page - Cree, Inc

PXAE263708NB-V1-R2 Datasheet HTML 9Page - Cree, Inc

Codice articolo simile - PXAE263708NB-V1-R2

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
WOLFSPEED, INC.	PXAE263708NB-V1-R2	612Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 400 W (P3dB), 28 V, 2620 – 2690 MHz Rev. 04, 2023-06-23

Descrizione simile - PXAE263708NB-V1-R2

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Infineon Technologies A...	PXAC260602FC	551Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB @ 28 V, 2620 ??2690 MHz Rev. 02.4, 2016-06-22
	PTFC262808SV	180Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 ??2690 MHz Rev. 02.1, 2013-08-02
	PTFC262157FH	1Mb / 10P	Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2620 ??2690 MHz Rev. 03.1, 2016-06-21
	PTFC261402FC	231Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 2620 ??2690 MHz Rev. 05, 2016-06-21
	PTFC262808FV	1Mb / 8P	Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 ??2690 MHz Rev. 03, 2016-06-22
Cree, Inc	PXAC260602FC	633Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB 28 V, 2620 ??2690 MHz
	PTAC260302FC	636Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 30 W, 28 V, 2620 ??2690 MHz
	PTFC261402FC	322Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 2620 ??2690 MHz
	PTFC262808FV	806Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 ??2690 MHz
WOLFSPEED, INC.	PXAE263708NB	612Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 400 W (P3dB), 28 V, 2620 – 2690 MHz Rev. 04, 2023-06-23

A proposito di Cree, Inc

Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*Queste informazioni sono solo a scopo informativo generale, non saremo responsabili per eventuali perdite o danni causati dalle informazioni di cui sopra.

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