CAB450M12XM3 Scheda tecnica(PDF) - Cree, Inc

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CAB450M12XM3 Scheda tecnica (PDF) - Cree, Inc

CAB450M12XM3 Datasheet PDF - Cree, Inc


Il numero della parte	CAB450M12XM3

Scarica	CAB450M12XM3 Scarica

Grandezza file	893.57 Kbytes

Page	9 Pages

Produttore elettronici	CREE [Cree, Inc]

Homepage	http://www.cree.com/

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Spiegazioni elettronici

1200V, 450A All-Silicon Carbide Conduction Optimized, Half-Bridge Module

CAB450M12XM3 Datasheet (PDF)

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Scarica Scheda tecnica

CAB450M12XM3 Datasheet PDF - Cree, Inc


Il numero della parte	CAB450M12XM3

Scarica	CAB450M12XM3 Click to download

Grandezza file	893.57 Kbytes

Page	9 Pages

Produttore elettronici	CREE [Cree, Inc]

Homepage	http://www.cree.com/

Logo

Spiegazioni elettronici	1200V, 450A All-Silicon Carbide Conduction Optimized, Half-Bridge Module

CAB450M12XM3 Scheda tecnica (HTML) - Cree, Inc

CAB450M12XM3 Datasheet HTML 1Page - Cree, Inc

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CAB450M12XM3 Datasheet HTML 9Page - Cree, Inc

Codice articolo simile - CAB450M12XM3

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
WOLFSPEED, INC.	CAB450M12XM3	892Kb / 9P	1200V, 450A All-Silicon Carbide Conduction Optimized, Half-Bridge Module Rev. A, 2019-06-01

Descrizione simile - CAB450M12XM3

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
M.S. Kennedy Corporatio...	MSK4810	1Mb / 5P	1200V/450A HALF BRIDGE PEM
Cree, Inc	CAS100H12AM1	740Kb / 7P	1200V, 100A Silicon Carbide Half-Bridge Module
Molex Electronics Ltd.	CAS100H12AM1	859Kb / 11P	1200V, 100A Silicon Carbide Half-Bridge Module
Cree, Inc	CAB400M12XM3	801Kb / 9P	1200 V, 400 A All-Silicon Carbide Switching-Loss Optimized, Half-Bridge Module
General Electric Compan...	GE12047CCA3	491Kb / 9P	1200V half bridge Silicon Carbide Power module Rev. : 1, Public Release May 11, 2021
WOLFSPEED, INC.	CAB400M12XM3	801Kb / 9P	1200 V, 400 A All-Silicon Carbide Switching-Loss Optimized, Half-Bridge Module Rev. -, 2019-10-31
	CAB425M12XM3	774Kb / 9P	1200 V, 425 A All-Silicon Carbide Switching-Optimized, Half-Bridge Module Rev. -, 2020-01-28
	CAB450M12XM3	892Kb / 9P	1200V, 450A All-Silicon Carbide Conduction Optimized, Half-Bridge Module Rev. A, 2019-06-01
	EAB450M12XM3	1Mb / 11P	Automotive Qualified 1200 V, 450 A All-Silicon Carbide Conduction-Optimized, Half-Bridge Module Rev. A 2020-10-07
	WAB400M12BM3	1Mb / 12P	1200 V, 400 A All-Silicon Carbide THB-80 Qualified, Conduction Optimized, Half-Bridge Module Rev. A 2020-05-22

A proposito di Cree, Inc

Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*Queste informazioni sono solo a scopo informativo generale, non saremo responsabili per eventuali perdite o danni causati dalle informazioni di cui sopra.

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