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HX6356 Scheda tecnica (PDF) - List of Unclassifed Manufacturers

HX6356 Datasheet PDF - List of Unclassifed Manufacturers
Il numero della parte HX6356
Scarica  HX6356 Scarica
Grandezza file   145.39 Kbytes
Page   12 Pages
Produttore elettronici  ETC1 [List of Unclassifed Manufacturers]
Homepage  
Logo ETC1 - List of Unclassifed Manufacturers
Spiegazioni elettronici 32K x 8 STATIC RAM-SOI

HX6356 Datasheet (PDF)

Go To PDF Page Scarica Scheda tecnica
HX6356 Datasheet PDF - List of Unclassifed Manufacturers

Il numero della parte HX6356
Scarica  HX6356 Click to download

Grandezza file   145.39 Kbytes
Page   12 Pages
Produttore elettronici  ETC1 [List of Unclassifed Manufacturers]
Homepage  
Logo ETC1 - List of Unclassifed Manufacturers
Spiegazioni elettronici 32K x 8 STATIC RAM-SOI

HX6356 Scheda tecnica (HTML) - List of Unclassifed Manufacturers


HX6356 Dettagli del prodotto

[Honeywell]



GENERAL DESCRIPTION

The 32K x 8 Radiation Hardened Static RAM is a high performance 32,768 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in systems operating in harsh, transient

radiation environments. The RAM operates over the full military temperature range and requires only a single 5 V ± 10% power supply. The RAM is available with either TTL or CMOS compatible I/O. Power consumption is typically less than 15 mW/MHz in operation, and less than 5 mW when

de-selected. The RAM read operation is fully asynchronous, with an associated typical access time of 14 ns at 5V.



FEATURES

RADIATION

• Fabricated with RICMOS™ IV Silicon on Insulator (SOI) 0.75µm Process (Leff = 0.6 µm)

• Total Dose Hardness through 1x106 rad(SiO2)

• Neutron Hardness through 1x1014 cm-2

• Dynamic and Static Transient Upset Hardness through 1x1011 rad(Si)/s

• Dose Rate Survivability through 1x1012 rad(Si)/s

• Soft Error Rate of <1x10-10 upsets/bit-day in Geosynchronous Orbit

• Latchup Free



OTHER

• Listed On SMD# 5962-95845

• Fast Read/Write Cycle Times

  ≤17 ns (Typical)

  ≤25 ns (-55 to 125°C)

• Typical Operating power < 15 mW/MHz

• Asynchronous Operation

• CMOS or TTL Compatible I/O

• Single 5 V ±10% Power Supply

• Packaging Options

  - 36-Lead CFP—Bottom Braze (0.630 in. x 0.650 in.)

  - 36-Lead CFP—Top Braze (0.630 in. x 0.650 in.)




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