NX6406 Scheda tecnica(PDF) - California Eastern Labs

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NX6406 Scheda tecnica (PDF) - California Eastern Labs

NX6406 Datasheet PDF - California Eastern Labs


Il numero della parte	NX6406

Scarica	NX6406 Scarica

Grandezza file	379.08 Kbytes

Page	5 Pages

Produttore elettronici	CEL [California Eastern Labs]

Homepage	http://www.cel.com

Logo

Spiegazioni elettronici

NECs 1490 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS

NX6406 Datasheet (PDF)

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Scarica Scheda tecnica

NX6406 Datasheet PDF - California Eastern Labs


Il numero della parte	NX6406

Scarica	NX6406 Click to download

Grandezza file	379.08 Kbytes

Page	5 Pages

Produttore elettronici	CEL [California Eastern Labs]

Homepage	http://www.cel.com

Logo

Spiegazioni elettronici	NECs 1490 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS

NX6406 Scheda tecnica (HTML) - California Eastern Labs

NX6406 Datasheet HTML 1Page - California Eastern Labs

NX6406 Datasheet HTML 2Page - California Eastern Labs

NX6406 Datasheet HTML 3Page - California Eastern Labs

NX6406 Datasheet HTML 4Page - California Eastern Labs

NX6406 Datasheet HTML 5Page - California Eastern Labs

Codice articolo simile - NX6406

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Renesas Technology Corp	NX6406	245Kb / 9P	LASER DIODE 2004
	NX6406GH	245Kb / 9P	LASER DIODE 2004
	NX6406GK	245Kb / 9P	LASER DIODE 2004

Descrizione simile - NX6406

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
NEC	NX8503BG	98Kb / 5P	NECs 1550 nm InGaAsP MQW DFB LASER DIODE
California Eastern Labs	NX5315	349Kb / 5P	NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS
	NX5501	452Kb / 7P	NECs 1550 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE FOR FTTH APPLICATION
	NX5504	309Kb / 6P	NECs 1550 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE FOR FTTH APPLICATION
	NX5311	160Kb / 4P	1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 1.25 Gb/s AND FTTH PON APPLICATIONS
	NX5313	162Kb / 4P	1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS
	NX8304BE	106Kb / 5P	NECs 1310 nm InGaAsP MQW-DFB LASER DIODE
	NX8303BG	99Kb / 4P	NECs 1310 nm InGaAsP MQW-DFB LASER DIODE
	NX8300BE	126Kb / 5P	NECs 1310 nm InGaAsP MQW-DFB LASER DIODE
	NX5311S	161Kb / 4P	NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 1.25 Gb/s AND FTTH PON APPLICATIONS

A proposito di California Eastern Labs

California Eastern Laboratories (CEL) is a leading semiconductor manufacturer and technology company that specializes in the design, development, and production of advanced RF and microwave components and systems. The company is headquartered in Santa Clara, California, and has been in operation for over 60 years.

CEL is known for its extensive range of high-performance RF and microwave products, including RF switches, mixers, amplifiers, and modules. The company also offers custom design services for customers with specific needs. CEL's products are widely used in various industries, including wireless communication, aerospace and defense, automotive, and medical.

CEL is also the exclusive sales and marketing partner of Renesas Electronics Corporation for North and South America, providing Renesas' broad portfolio of semiconductors to customers in the region.

*Queste informazioni sono solo a scopo informativo generale, non saremo responsabili per eventuali perdite o danni causati dalle informazioni di cui sopra.

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