NX6506 Scheda tecnica(PDF) - California Eastern Labs

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NX6506 Scheda tecnica (PDF) - California Eastern Labs

NX6506 Datasheet PDF - California Eastern Labs


Il numero della parte	NX6506

Scarica	NX6506 Scarica

Grandezza file	353.47 Kbytes

Page	5 Pages

Produttore elettronici	CEL [California Eastern Labs]

Homepage	http://www.cel.com

Logo

Spiegazioni elettronici

NECs 1550 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 622 Mb/s AND 1.25 Gb/s APPLICATIONS

NX6506 Datasheet (PDF)

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Scarica Scheda tecnica

NX6506 Datasheet PDF - California Eastern Labs


Il numero della parte	NX6506

Scarica	NX6506 Click to download

Grandezza file	353.47 Kbytes

Page	5 Pages

Produttore elettronici	CEL [California Eastern Labs]

Homepage	http://www.cel.com

Logo

Spiegazioni elettronici	NECs 1550 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 622 Mb/s AND 1.25 Gb/s APPLICATIONS

NX6506 Scheda tecnica (HTML) - California Eastern Labs

NX6506 Datasheet HTML 1Page - California Eastern Labs

NX6506 Datasheet HTML 2Page - California Eastern Labs

NX6506 Datasheet HTML 3Page - California Eastern Labs

NX6506 Datasheet HTML 4Page - California Eastern Labs

NX6506 Datasheet HTML 5Page - California Eastern Labs

Codice articolo simile - NX6506

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Renesas Technology Corp	NX6506	247Kb / 9P	LASER DIODE 2004
	NX6506GH	247Kb / 9P	LASER DIODE 2004
	NX6506GK	247Kb / 9P	LASER DIODE 2004

Descrizione simile - NX6506

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
California Eastern Labs	NX5310	342Kb / 5P	NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/S AND FTTH APPLICATIONS
	NX5312	347Kb / 5P	NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/s APPLICATIONS
	NX6508	332Kb / 4P	NECs InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s, CWDM APPLICATIONS
	NX6509	310Kb / 5P	NECs 1550 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR LONG HAUL 2.5 Gb/s APPLICATIONS
	NX8303BG-CC	98Kb / 4P	NECs 1310 nm InGaAsP MQW DFB LASER DIODE IN COAXIAL PACKAGE FOR 622 Mb/s APPLICATION
	NX6301	96Kb / 4P	1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
	NX6306	388Kb / 5P	1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s and 622 Mb/s APPLICATIONS
	NX8504BE-CC	111Kb / 5P	1550 nm InGaAsP MQW DFB LASER DIODE IN COAXIAL PACKAGE for 622 Mb/s APPLICATION
	NX8504BE	112Kb / 5P	NECs 1550 nm InGaAsP MQW DFB LASER DIODE IN COAXIAL PACKAGE for 622 Mb/s APPLICATION
	NX5304	167Kb / 5P	NECs 1310 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s AND 1.25 Gb/s APPLICATIONS

A proposito di California Eastern Labs

California Eastern Laboratories (CEL) is a leading semiconductor manufacturer and technology company that specializes in the design, development, and production of advanced RF and microwave components and systems. The company is headquartered in Santa Clara, California, and has been in operation for over 60 years.

CEL is known for its extensive range of high-performance RF and microwave products, including RF switches, mixers, amplifiers, and modules. The company also offers custom design services for customers with specific needs. CEL's products are widely used in various industries, including wireless communication, aerospace and defense, automotive, and medical.

CEL is also the exclusive sales and marketing partner of Renesas Electronics Corporation for North and South America, providing Renesas' broad portfolio of semiconductors to customers in the region.

*Queste informazioni sono solo a scopo informativo generale, non saremo responsabili per eventuali perdite o danni causati dalle informazioni di cui sopra.

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