Description
The IRF6662 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

• Lead and Bromide Free
• Low Profile (<0.7 mm)
• Dual Sided Cooling Compatible
• Ultra Low Package Inductance
• Optimized for High Frequency Switching
• Ideal for High Performance Isolated Converter Primary Switch Socket
• Optimized for Synchronous Rectification
• Low Conduction Losses
• Compatible with existing Surface Mount Techniques