HN3B02FU Scheda tecnica(PDF) - Toshiba Semiconductor

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HN3B02FU Scheda tecnica (PDF) - Toshiba Semiconductor

HN3B02FU Datasheet PDF - Toshiba Semiconductor


Il numero della parte	HN3B02FU

Scarica	HN3B02FU Scarica

Grandezza file	102.31 Kbytes

Page	3 Pages

Produttore elettronici	TOSHIBA [Toshiba Semiconductor]

Homepage	http://www.semicon.toshiba.co.jp/eng

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Spiegazioni elettronici

TOSHIBA Transistor Silicon PNP⋅NPN Epitaxial Type (PCT Process)

HN3B02FU Datasheet (PDF)

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HN3B02FU Datasheet PDF - Toshiba Semiconductor


Il numero della parte	HN3B02FU

Scarica	HN3B02FU Click to download

Grandezza file	102.31 Kbytes

Page	3 Pages

Produttore elettronici	TOSHIBA [Toshiba Semiconductor]

Homepage	http://www.semicon.toshiba.co.jp/eng

Logo

Spiegazioni elettronici	TOSHIBA Transistor Silicon PNP⋅NPN Epitaxial Type (PCT Process)

HN3B02FU Scheda tecnica (HTML) - Toshiba Semiconductor

HN3B02FU Datasheet HTML 1Page - Toshiba Semiconductor

HN3B02FU Datasheet HTML 2Page - Toshiba Semiconductor

HN3B02FU Datasheet HTML 3Page - Toshiba Semiconductor

HN3B02FU Dettagli del prodotto

Audio Frequency General Purpose Amplifier Applications

Q1
• High voltage : VCEO = −50V
• High current : IC = −150mA (max)
• High hFE : hFE = 120∼400
• Excellent hFE linearity : hFE (IC = −0.1mA) / (IC = −2mA) = 0.95 (typ.)

Q2
• High voltage : VCEO = 60V
• High current : IC = 150mA (max)
• High hFE : hFE = 120∼400
• Excellent hFE linearity : hFE (IC = 0.1mA) / (IC = 2mA) = 0.95 (typ.)

Codice articolo simile - HN3B02FU

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Toshiba Semiconductor	HN3B01F	266Kb / 5P	PNP EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

Descrizione simile - HN3B02FU

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