5KP200A Scheda tecnica(PDF) - Formosa MS

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5KP200A Scheda tecnica (PDF) - Formosa MS

5KP200A Datasheet PDF - Formosa MS


Il numero della parte	5KP200A

Scarica	5KP200A Scarica

Grandezza file	87.47 Kbytes

Page	4 Pages

Produttore elettronici	FORMOSA [Formosa MS]

Homepage	http://www.formosams.com

Logo

Spiegazioni elettronici

GLASS PASSIVATED JUNCTION TRANSIENTVOLTAGE SUPPRESSOR

5KP200A Datasheet (PDF)

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Scarica Scheda tecnica

5KP200A Datasheet PDF - Formosa MS


Il numero della parte	5KP200A

Scarica	5KP200A Click to download

Grandezza file	87.47 Kbytes

Page	4 Pages

Produttore elettronici	FORMOSA [Formosa MS]

Homepage	http://www.formosams.com

Logo

Spiegazioni elettronici	GLASS PASSIVATED JUNCTION TRANSIENTVOLTAGE SUPPRESSOR

5KP200A Scheda tecnica (HTML) - Formosa MS

5KP200A Datasheet HTML 1Page - Formosa MS

5KP200A Datasheet HTML 2Page - Formosa MS

5KP200A Datasheet HTML 3Page - Formosa MS

5KP200A Datasheet HTML 4Page - Formosa MS

5KP200A Dettagli del prodotto

Features
◇ Glass passivated chip
◇ low leakage
◇ Uni and bidirectional unit
◇ Excelletn clamping capability
◇ Plastic material has UL recognition 94V-0
◇ Fast respones time

Codice articolo simile - 5KP200A

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Littelfuse	5KP200A	158Kb / 4P	Silicon Avalanche Diodes - 5000 Watt Axial Leaded Transient Voltage Suppressor
Won-Top Electronics	5KP200A	62Kb / 5P	5000W TRANSIENT VOLTAGE SUPPRESSOR
Pan Jit International I...	5KP200A	88Kb / 4P	GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
Galaxy Semi-Conductor H...	5KP200A	131Kb / 4P	TRANSIENT VOLTAGE SUPPRESSOR
MDE Semiconductor, Inc.	5KP200A	61Kb / 3P	GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR

Descrizione simile - 5KP200A

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Pan Jit International I...	1.5KE6.8	87Kb / 4P	GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
	P4KE	85Kb / 4P	GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
	P6KE	85Kb / 4P	GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
Chenmko Enterprise Co. ...	P6SBMJ6.8APT	102Kb / 4P	GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
CHENG-YI ELECTRONIC CO....	SA5.0	129Kb / 2P	GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
Zowie Technology Corpor...	P6KE	83Kb / 3P	GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
Yea Shin Technology Co....	P4KE	1Mb / 4P	GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
MDE Semiconductor, Inc.	20KPA20A	81Kb / 3P	GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
MDE Semiconductor, Inc.	30KPA28A	83Kb / 3P	GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
New Jersey Semi-Conduct...	ICTE5.0	158Kb / 2P	GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR

A proposito di Formosa MS

Formosa MS is a Taiwanese semiconductor company that specializes in the design and manufacture of integrated circuits (ICs) and semiconductor devices for a wide range of applications. The company was founded in 1979 and is based in Taipei, Taiwan.

Formosa MS's product portfolio includes analog and mixed-signal ICs, power management ICs, LED lighting ICs, and automotive ICs, among others. The company's products are used in various industries, such as automotive, industrial, consumer electronics, and communications.

Formosa MS is committed to quality and reliability, and it has obtained various certifications, including ISO 9001, ISO 14001, and IATF 16949. The company's manufacturing facilities use advanced production equipment and quality control processes to ensure the highest levels of product performance and reliability.

Today, Formosa MS is recognized as a leading semiconductor company in Taiwan, with a strong reputation for providing high-quality and innovative solutions to its customers. The company continues to invest in research and development to stay at the forefront of new technologies and applications in the semiconductor industry.

*Queste informazioni sono solo a scopo informativo generale, non saremo responsabili per eventuali perdite o danni causati dalle informazioni di cui sopra.

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