These devices are designed for low power audio amplifier and low−current, high−speed switching applications.
   
Features
• High Collector−Emitter Sustaining Voltage −
                 VCEO(sus) = 100 Vdc (Min)
• High DC Current Gain @ IC = 200 mAdc
                 hFE = 40−200
                         = 40−120
• Low Collector−Emitter Saturation Voltage −
                VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
• High Current Gain Bandwidth Product −
                 fT = 40 MHz (Min) @ IC = 100 mAdc
• Annular Construction for Low Leakages
                 ICBO = 100 nAdc (Max) @ Rated VCB
• Pb−Free Packages are Available*