RB160M-30 Scheda tecnica(PDF) - Shanghai Leiditech Electronic Technology Co., Ltd

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RB160M-30 Scheda tecnica (PDF) - Shanghai Leiditech Electronic Technology Co., Ltd

RB160M-30 Datasheet PDF - Shanghai Leiditech Electronic Technology Co., Ltd


Il numero della parte	RB160M-30

Scarica	RB160M-30 Scarica

Grandezza file	587.98 Kbytes

Page	3 Pages

Produttore elettronici	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

Homepage	http://www.leiditech.com

Logo

Spiegazioni elettronici

Low stored change,majority carrier conduction.

RB160M-30 Datasheet (PDF)

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Scarica Scheda tecnica

RB160M-30 Datasheet PDF - Shanghai Leiditech Electronic Technology Co., Ltd


Il numero della parte	RB160M-30

Scarica	RB160M-30 Click to download

Grandezza file	587.98 Kbytes

Page	3 Pages

Produttore elettronici	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

Homepage	http://www.leiditech.com

Logo

Spiegazioni elettronici	Low stored change,majority carrier conduction.

RB160M-30 Scheda tecnica (HTML) - Shanghai Leiditech Electronic Technology Co., Ltd

RB160M-30 Datasheet HTML 1Page - Shanghai Leiditech Electronic Technology Co., Ltd

RB160M-30 Datasheet HTML 2Page - Shanghai Leiditech Electronic Technology Co., Ltd

RB160M-30 Datasheet HTML 3Page - Shanghai Leiditech Electronic Technology Co., Ltd

Codice articolo simile - RB160M-30

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Rohm	RB160M-30	108Kb / 3P	DIODE
Rohm	RB160M-30	145Kb / 4P	Schottky barrier diode
Guangdong Kexin Industr...	RB160M-30	127Kb / 2P	Schottky Barrier Diode
Rohm	RB160M-30	952Kb / 4P	Schottky barrier diode
Rohm	RB160M-30	319Kb / 4P	Schottky barrier diode

Descrizione simile - RB160M-30

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Gaomi Xinghe Electronic...	B5817W	300Kb / 3P	Low stored change,majority carrier conduction.
Taiwan Semiconductor Co...	MBR20200PT	103Kb / 2P	Metal silicon junction, majority carrier conduction
Gaomi Xinghe Electronic...	MBR1030	377Kb / 2P	Metal of silicon rectifier , majority carrier conduction
Kersemi Electronic Co.,...	MBR10H60	1Mb / 3P	Metal silicon junction, majority carrier conduction
Sangdest Microelectroni...	1N5817W	135Kb / 4P	Metal silicon junction, majority carrier conduction
SHIKUES Electronics	B5817WS	2Mb / 4P	Extremely low, Low stored change, Majority carrier conduction
	BAL99	657Kb / 2P	Extremely low, Low stored change, Majority carrier conduction
	MBR30100C-ST	482Kb / 3P	Trench MOS schottky technology, Low stored charge Majority Carrier Conduction
Shanghai Leiditech Elec...	B5817W	790Kb / 3P	Low stored change,majority carrier conduction.
Shenzhen Luguang Electr...	SS345FL	1Mb / 2P	Metal silicon junction, majority carrier conduction

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