RF Power Field Effect Transistors N- Channel Enhancement-Mode Lateral MOSFETs



Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common- source amplifier applications in 26 volt base station equipment.



• Typical Performance at 945 MHz, 26 Volts Output Power ó 30 Watts PEP

      Power Gain - 20 dB

      Efficiency - 41% (Two Tones)

      IMD  - - 31 dBc

• Integrated ESD Protection

• Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW Output Power



Features

• Excellent Thermal Stability

• Characterized with Series Equivalent Large- Signal Impedance Parameters

• Dual- Lead Boltdown Plastic Package Can Also Be Used As Surface Mount.

• 200C Capable Plastic Package

• N Suffix Indicates Lead- Free Terminations. RoHS Compliant.

• TO- 272- 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

• TO- 270- 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.