RFM10P12 Scheda tecnica(PDF) - GE Solid State

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RFM10P12 Scheda tecnica (PDF) - GE Solid State

RFM10P12 Datasheet PDF - GE Solid State


Il numero della parte	RFM10P12

Scarica	RFM10P12 Scarica

Grandezza file	242.88 Kbytes

Page	4 Pages

Produttore elettronici	GESS [GE Solid State]

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Spiegazioni elettronici

P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS

RFM10P12 Datasheet (PDF)

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RFM10P12 Datasheet PDF - GE Solid State


Il numero della parte	RFM10P12

Scarica	RFM10P12 Click to download

Grandezza file	242.88 Kbytes

Page	4 Pages

Produttore elettronici	GESS [GE Solid State]

Homepage

Logo

Spiegazioni elettronici	P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS

RFM10P12 Scheda tecnica (HTML) - GE Solid State

RFM10P12 Datasheet HTML 1Page - GE Solid State

RFM10P12 Datasheet HTML 2Page - GE Solid State

RFM10P12 Datasheet HTML 3Page - GE Solid State

RFM10P12 Datasheet HTML 4Page - GE Solid State

RFM10P12 Dettagli del prodotto

P-Channel Enhancement - Mode Power Field-Effect Transistors

Features:
■ SOA is power-dissipation limited
■ Nanoseconde switching speeds
■ Linear transfer characteristics
■ High input impedance
■ Majority carrier device

Codice articolo simile - RFM10P12

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Inchange Semiconductor ...	RFM10P12	269Kb / 2P	isc P-Channel MOSFET Transistor

Descrizione simile - RFM10P12

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
List of Unclassifed Man...	RFM6P08	445Kb / 8P	P CHANNEL ENHANCEMENT MODE POWER FIELD EFFECT TRANSISTORS
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New Jersey Semi-Conduct...	RFP15N12	87Kb / 2P	N-Channel Enhancement-Mode Power Field-Effect Transistors
	RFP10N12	89Kb / 2P	N-Channel Enhancement-Mode Power Field-Effect Transistors
	RFP5P12	88Kb / 2P	P-Channel Enhancement-Mode Power Field-Effect Transistors
	RFM10N12	89Kb / 2P	N-Channel Enhancement-Mode Power Field-Effect Transistors
	RFM5P12	88Kb / 2P	P-Channel Enhancement-Mode Power Field-Effect Transistors

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