Functional Description[1]
The WCMC8016V9X is a high-performance CMOS pseudo static RAM organized as 512K words by 16 bits that supports an asynchronous memory interface. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life® (MoBL®) in portable applications such as cellular telephones.
   
Features
• Wide voltage range: 2.70V–3.30V
• Access Time: 70ns
• Ultra-low active power
    — Typical active current: 2.0mA @ f = 1 MHz
    — Typical active current: 11mA @ f = fmax
• Ultra low standby power
• Easy memory expansion with CE, CE2, and OE features
• Automatic power-down when deselected
• CMOS for optimum speed/power
• Offered in a 48 Ball BGA Package