SSM3K329R Scheda tecnica(PDF)

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SSM3K329R Scheda tecnica (PDF) - Toshiba Semiconductor

SSM3K329R Datasheet PDF - Toshiba Semiconductor


Il numero della parte	SSM3K329R

Scarica	SSM3K329R Scarica

Grandezza file	392.83 Kbytes

Page	9 Pages

Produttore elettronici	TOSHIBA [Toshiba Semiconductor]

Homepage	http://www.semicon.toshiba.co.jp/eng

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Spiegazioni elettronici

MOSFETs Silicon N-Channel MOS

SSM3K329R Datasheet (PDF)

Scarica Scheda tecnica


Il numero della parte	SSM3K329R

Scarica	SSM3K329R Click to download

Grandezza file	392.83 Kbytes

Page	9 Pages

Produttore elettronici	TOSHIBA [Toshiba Semiconductor]

Homepage	http://www.semicon.toshiba.co.jp/eng

Logo

Spiegazioni elettronici	MOSFETs Silicon N-Channel MOS

SSM3K329R Scheda tecnica (HTML) - Toshiba Semiconductor

SSM3K329R Datasheet HTML 1Page - Toshiba Semiconductor

SSM3K329R Datasheet HTML 2Page - Toshiba Semiconductor

SSM3K329R Datasheet HTML 3Page - Toshiba Semiconductor

SSM3K329R Datasheet HTML 4Page - Toshiba Semiconductor

SSM3K329R Datasheet HTML 5Page - Toshiba Semiconductor

SSM3K329R Datasheet HTML 6Page - Toshiba Semiconductor

SSM3K329R Datasheet HTML 7Page - Toshiba Semiconductor

SSM3K329R Datasheet HTML 8Page - Toshiba Semiconductor

SSM3K329R Datasheet HTML 9Page - Toshiba Semiconductor

SSM3K329R Dettagli del prodotto

Applications
• Power Management Switches
• High-Speed Switching

Features
(1) 1.8-V gate drive voltage.
(2) Low drain-source on-resistance
: RDS(ON) = 289 mΩ (max) (@VGS = 1.8 V)
RDS(ON) = 170 mΩ (max) (@VGS = 2.5 V)
RDS(ON) = 126 mΩ (max) (@VGS = 4.0 V)

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