General description
The MC33HB2002 is a SMARTMOS monolithic H-Bridge Power IC, enhanced with SPI
configurability and diagnostic capabilities. It is designed primarily for DC motor or servo
motor control applications within the specified current and voltage limits.
The MC33HB2002 is similar to the MC33HB2000 device with higher overtemperature
setting and the use of current foldback for current limiting to extend fault operation range.
The MC33HB2002 is able to control inductive loads with peak currents greater than 10 A.
The nominal continuous average load current is 3.0 A. A current mirror output provides
an analog feedback signal proportional to the load current.
This part is designed to specifically address the ISO 26262 safety requirements. It meets
the stringent requirements of automotive applications and is fully AEC-Q100 grade 1
qualified.

Features and benefits
• Advanced diagnostic reporting via a serial peripheral interface (SPI): charge pump
undervoltage, overvoltage, and undervoltage on VPWR, short to ground and short
to VPWR for each output, open load, temperature warning and overtemperature
shutdown
• Thermal management: Excellent thermal resistance of <1.0 °C/W between junction and case (exposed pad)
• Eight selectable slew rates via the SPI: 0.25 V/μs to more than 16 V/μs for EMI and
thermal performance optimization
• Four selectable current limits via the SPI: 5.4/7.0/8.8/10.7 A covering a wide range of
applications
• Extended high temperature operating range with current foldback while limiting the
current
• Small footprint HVQFN 6x6mm package
• Can be operated without SPI with default slew rate of 2.0 V/μs and a 7.0 A current limit
threshold
• Highly accurate real-time current feedback through a current mirror output signal with
less than 5.0 % error
• Drives inductive loads in a full H-bridge or Half-bridge configuration
• Overvoltage protection places the load in high-side recirculation (braking) mode with
notification in H-bridge mode
• Wide operating range: 5.0 V to 28 V operation
• Low RDS(on) integrated MOSFETs: Maximum of 235 mΩ (TJ = 150 °C) for each
MOSFET
• Internal protection for overtemperature, undervoltage, and short-circuit by signaling the error condition and disabling the outputs
• I/O pins can withstand up to 36 V
• AEC-Q100 grade 1 qualified

Applications
• Electronic throttle control
• Exhaust gas recirculation control (EGR)
• Turbo, swirl and whirl and waste flap control
• Electric pumps, motor control and auxiliaries