T1G4020036-FS Scheda tecnica(PDF) - Qorvo, Inc

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T1G4020036-FS Scheda tecnica (PDF) - Qorvo, Inc

T1G4020036-FS Datasheet PDF - Qorvo, Inc


Il numero della parte	T1G4020036-FS

Scarica	T1G4020036-FS Scarica

Grandezza file	1788.34 Kbytes

Page	18 Pages

Produttore elettronici	QORVO [Qorvo, Inc]

Homepage	https://www.qorvo.com/

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Spiegazioni elettronici

DC ??3.5 GHz, 50 V, 2 x 200 W GaN RF Transistor

T1G4020036-FS Datasheet (PDF)

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T1G4020036-FS Datasheet PDF - Qorvo, Inc


Il numero della parte	T1G4020036-FS

Scarica	T1G4020036-FS Click to download

Grandezza file	1788.34 Kbytes

Page	18 Pages

Produttore elettronici	QORVO [Qorvo, Inc]

Homepage	https://www.qorvo.com/

Logo

Spiegazioni elettronici	DC ??3.5 GHz, 50 V, 2 x 200 W GaN RF Transistor

T1G4020036-FS Scheda tecnica (HTML) - Qorvo, Inc

T1G4020036-FS Datasheet HTML 1Page - Qorvo, Inc

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T1G4020036-FS Datasheet HTML 3Page - Qorvo, Inc

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T1G4020036-FS Datasheet HTML 9Page - Qorvo, Inc

T1G4020036-FS Datasheet HTML 10Page - Qorvo, Inc

T1G4020036-FS Dettagli del prodotto

Key Features
• Frequency: DC to 3.5 GHz
• Output Power (P3dB)1: 200 W
• Linear Gain1: 18.1 dB
• Typical PAE3dB
1: 67.6%
• Operating Voltage: 50 V
• CW and Pulse capable
Note 1: @ 2.8 GHz Load Pull (Half of device)

Codice articolo simile - T1G4020036-FS

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
TriQuint Semiconductor	T1G4020036-FS	1Mb / 21P	2 x 120W Peak Power, 2 x24W Average Power, 36V DC ??3.5 GHz, GaN RF Power Transistor
	T1G4020036-FSEVB1	1Mb / 21P	2 x 120W Peak Power, 2 x24W Average Power, 36V DC ??3.5 GHz, GaN RF Power Transistor
	T1G4020036-FS	1Mb / 21P	2 x 120W Peak Power, 2 x24W Average Power, 36V DC ??3.5 GHz, GaN RF Power Transistor

Descrizione simile - T1G4020036-FS

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Qorvo, Inc	QPD1020	1Mb / 21P	2.7 ??3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor
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