FEATURES
• Isolated package
• High voltage isolation = 2.5 kVRMS (t = 60 s;
f = 60 Hz)
• Sink to lead creepage distance = 4.8 mm
• P-channel
• Dynamic dV/dt rating
• Low thermal resistance
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional
insulating hardware in commercial-industrial applications.
The molding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a
100 micron mica barrier with standard TO-220 product. The
FULLPAK is mounted to a heatsink using a single clip or by
a single screw fixing.