Features
 High ruggedness
 Low RDS(ON) (Typ 0.8Ω)@VGS=10V
 Low Gate Charge (Typ 18nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application: LED,Charge, Adaptor

General Description
This power MOSFET is produced with advanced super junction technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.