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F6212 Scheda tecnica (PDF) - Renesas Technology Corp

F6212 Datasheet PDF - Renesas Technology Corp
Il numero della parte F6212
Scarica  F6212 Scarica
Grandezza file   261.11 Kbytes
Page   3 Pages
Produttore elettronici  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp
Spiegazioni elettronici Dual-Beam Rx Active Beamforming IC 17.7 – 21.2 GHz

F6212 Datasheet (PDF)

Go To PDF Page Scarica Scheda tecnica
F6212 Datasheet PDF - Renesas Technology Corp

Il numero della parte F6212
Scarica  F6212 Click to download

Grandezza file   261.11 Kbytes
Page   3 Pages
Produttore elettronici  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp
Spiegazioni elettronici Dual-Beam Rx Active Beamforming IC 17.7 – 21.2 GHz

F6212 Scheda tecnica (HTML) - Renesas Technology Corp


F6212 Dettagli del prodotto

Features
 17.7 – 21.2GHz operation
 Supports 4 dual-pol or 8 single-pol elements
 Two simultaneous and independent beam outputs
 Integrated Hi-Q transmit reject filter
 28dB typical channel gain
 26dB gain control with 0.45dB step size
 360° phase control with 6-bit resolution
 2.3V and 1V nominal supply inputs
 Standard 1.8V digital logic
 Temperature compensation
 Temperature sensor w/ digital readout
 Advanced digital modes with fast beam steering
 On-chip beam-state memory
 7.6  7.6  0.9 mm, 165-FCBGA
Typical Applications
 Phased array antennas
 Ka-Band SATCOM terminals
 Aerospace, maritime, and SOTM

Description
The F6212 is a 16-channel dual-beam receive active beamforming
RFIC multi-chip module designed for application in Ka-Band
SATCOM planar phased array antennas. The IC has eight RF input
ports, two RF output ports, and 16 (8 per beam) phase/amplitude
control channels. The eight input ports of the IC can be driven by
eight single-polarized elements or four dual-polarized elements of
an electronically scanned array (ESA). Each channel has 6 bits of
digital phase and gain control resolution spanning 360° and 26dB
of dynamic range, enabling precise beam pattern and polarization
control.
The IC operates from two supply rails of 2.1 - 2.5V and 0.95 - 1.05V
with a typical channel gain of 28dB. The chip includes power
management features such as a low-power standby mode,
independent enable controls on every channel, and a single-beam
mode activated via a dedicated control pin. An integrated Hi-Q
bandpass filter provides rejection of SATCOM Tx and 5G mmWave
signals, improving the dynamic range without additional power
consumption. The device SPI bus and control pins operate from
standard 1.8V logic at speeds up to 50MHz. Advanced digital
modes and large on-chip memory allow for < 100ns beam position
switching times at the array level, greatly reducing dead time and
latency.
Finally, the compact and CTE-matched FCBGA organic package
with all single-ended 50ohm matched RF ports and 0.5mm pitch
greatly simplifies the physical integration of these devices onto
large antenna panels.




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A proposito di Renesas Technology Corp


Renesas Technology Corp è una società di semiconduttori giapponesi che fornisce una vasta gamma di microcontrollori, sistemi su chip e dispositivi analogici e di alimentazione per varie applicazioni nei mercati automobilistici, industriali e di consumo.
La società è stata formata nel 2010 attraverso la fusione di NEC Electronics Corporation e Renesas Technology Corporation.
Renesas è uno dei più grandi fornitori di microcontrollori al mondo ed è noto per la sua esperienza nello sviluppo di tecnologie avanzate in settori come l'Internet of Things (IoT), l'intelligenza artificiale (AI) e l'elettronica automobilistica.
La società ha operazioni in oltre 20 paesi e i suoi prodotti vengono utilizzati in una vasta gamma di applicazioni.

*Queste informazioni sono solo a scopo informativo generale, non saremo responsabili per eventuali perdite o danni causati dalle informazioni di cui sopra.




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