Features
• High efficiency and linear gain operations
• Integrated ESD protection
• Internally matched for ease of use
• Optimized for Doherty applications
• Large positive and negative gate-source voltage range for improved class C
operation
• In compliance with the European Directive 2002/95/EC

Description
The RF2L16180CB4 is 180 W, 28 V internally matched LDMOS transistor designed
for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with
frequencies from 1300 to 1600 MHz. Four leads can be configured as single ended,
180 degree push-pull or 90 degree hybrid or Doherty with proper external matching
network.

Applications
• Multicarrier base station
• Industrial, scientific and medical