DESCRIPTION
The TC58NVG5D2 is a single 3.3 V 32 Gbit (36,393,025,536 bits) NAND Electrically Erasable and Programmable
Read-Only Memory (NAND E2PROM) organized as (8192 + 376) bytes × 128 pages × 4148 blocks.
The device has two 8568-byte static registers which allow program and read data to be transferred between the
register and the memory cell array in 8568-byte increments. The Erase operation is implemented in a single block
unit (1 Mbytes + 47 Kbytes: 8568 bytes × 128 pages).
The TC58NVG5D2 is a serial-type memory device which utilizes the I/O pins for both address and data
input/output as well as for command inputs. The Erase and Program operations are automatically executed making
the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still
cameras and other systems which require high-density non-volatile memory data storage.

FEATURES
• Organization
TC58NVG4D2E
Memory cell array 8568 × 518.5K × 8
Register 8568 × 8
Page size 8568 bytes
Block size (1M + 47 K) bytes
• Modes
Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy,
Multi Page Program, Multi Block Erase, Multi Page Copy, Mullti Page Read
• Mode control
Serial input/output
Command control
• Number of valid blocks
Min 3936 blocks
Max 4148 blocks
• Power supply
VCC = 2.7 V to 3.6 V
• Access time
Cell array to register 200 µs max
Serial Read Cycle 25 ns min
• Program/Erase time
Auto Page Program 1600 µs/page typ.
Auto Block Erase 4.5 ms/block typ.
• Operating current
Read (25 ns cycle) TBD ( 65 to 70) mA max.
Program (avg.) TBD ( 65 to 70)mA max.
Erase (avg.) TBD ( 65 to 70)mA max.
Standby 100µA max
• Package
(Weight: g typ.)
• FOR RELIABILITY GUIDANCE, PLEASE REFER TO THE APPLICATION NOTES AND COMMENTS (17).
24 bit ECC for each 1024 bytes is required.