APT10M11JVFR Scheda tecnica(PDF) - Advanced Power Technology

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APT10M11JVFR Scheda tecnica (PDF) - Advanced Power Technology

APT10M11JVFR Datasheet PDF - Advanced Power Technology


Il numero della parte	APT10M11JVFR

Scarica	APT10M11JVFR Scarica

Grandezza file	121.37 Kbytes

Page	4 Pages

Produttore elettronici	ADPOW [Advanced Power Technology]

Homepage	http://www.advpowertech.com

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Spiegazioni elettronici

High Voltage N-Channel enhancement mode power MOSFET

APT10M11JVFR Datasheet (PDF)

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APT10M11JVFR Datasheet PDF - Advanced Power Technology


Il numero della parte	APT10M11JVFR

Scarica	APT10M11JVFR Click to download

Grandezza file	121.37 Kbytes

Page	4 Pages

Produttore elettronici	ADPOW [Advanced Power Technology]

Homepage	http://www.advpowertech.com

Logo

Spiegazioni elettronici	High Voltage N-Channel enhancement mode power MOSFET

APT10M11JVFR Scheda tecnica (HTML) - Advanced Power Technology

APT10M11JVFR Datasheet HTML 1Page - Advanced Power Technology

APT10M11JVFR Datasheet HTML 2Page - Advanced Power Technology

APT10M11JVFR Datasheet HTML 3Page - Advanced Power Technology

APT10M11JVFR Datasheet HTML 4Page - Advanced Power Technology

Codice articolo simile - APT10M11JVFR

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Advanced Power Technolo...	APT10M11JVR	70Kb / 4P	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Advanced Power Technolo...	APT10M11JVRU2	730Kb / 7P	ISOTOP Boost chopper MOSFET Power Module
Microsemi Corporation	APT10M11JVRU2	705Kb / 7P	ISOTOP Boost chopper MOSFET Power Module
Advanced Power Technolo...	APT10M11JVRU3	730Kb / 7P	ISOTOP Buck chopper MOSFET Power Module
Microsemi Corporation	APT10M11JVRU3	706Kb / 7P	ISOTOP Buck chopper MOSFET Power Module

Descrizione simile - APT10M11JVFR

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Seme LAB	IRF230	22Kb / 2P	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET
Advanced Power Technolo...	APL1001J	37Kb / 2P	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
	APL501J	114Kb / 4P	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
	APL501P	112Kb / 4P	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
	APT1001RBN	50Kb / 4P	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
	APT1004RGN	50Kb / 4P	N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
	APT60M90JN	60Kb / 4P	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
IXYS Corporation	IXTU01N100	65Kb / 2P	High Voltage MOSFET N-Channel, Enhancement Mode
Advanced Power Technolo...	APT10M07JVFR	121Kb / 4P	High Voltage N-Channel enhancement mode power MOSFET
Advanced Power Technolo...	APT10M11B2VFR	66Kb / 4P	High Voltage N-Channel enhancement mode power MOSFET

A proposito di Advanced Power Technology

Advanced Power Technology (APT) is a semiconductor company that designs, manufactures and sells power MOSFETs and IGBTs (Insulated Gate Bipolar Transistors). The company was founded in 1986 and is headquartered in Bend, Oregon, USA.

APT's products are used in a wide range of applications, including automotive, industrial, communications, and consumer electronics. The company offers a wide range of MOSFETs and IGBTs with different voltage and current ratings, package options and other features to meet the specific needs of its customers.

APT is known for its commitment to quality and innovation. The company's products are designed to meet the highest standards of performance and reliability, and are manufactured using the latest technology and materials. APT also offers custom design and engineering services to meet the specific needs of its customers.

APT has a global presence, with sales offices and representatives located around the world. The company is dedicated to delivering innovative and reliable power MOSFETs and IGBTs that meet the evolving needs of the electronics industry. In 2000, APT was acquired by Microsemi Corporation, which later became part of Microchip Technology Inc.

*Queste informazioni sono solo a scopo informativo generale, non saremo responsabili per eventuali perdite o danni causati dalle informazioni di cui sopra.

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