| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
 Toshiba Semiconductor |
U1DL49
|
122Kb / 3P |
TOSHIBA HIGH EFFICIENCY RECTIFIER (HED) SILICON EPITAXIAL JUNCTION TYPE
|
|
U20GL2C48A
|
93Kb / 2P |
TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE
|
|
U20GL2C53A
|
134Kb / 4P |
TOSHIBA High Efficiency Diode Stack (HED) Silicon Epitaxial Type
|
|
16DL2CZ47A
|
177Kb / 4P |
TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE
|
|
U20DL2C53A
|
132Kb / 4P |
TOSHIBA High Efficiency Diode Stack (HED) Silicon Epitaxial Type
|
|
CRG04A
|
301Kb / 7P |
Rectifier Diode Silicon Diffused Junction
|
|
CRG09A
|
307Kb / 7P |
Rectifier Diode Silicon Diffused Junction
|
|
CRG09B
|
306Kb / 7P |
Rectifier Diode Silicon Diffused Junction
|
|
CRG10A
|
300Kb / 7P |
Rectifier Diode Silicon Diffused Junction
|
|
CRH02B
|
303Kb / 7P |
High-Efficiency Diode (HED) Silicon Diffused Junction
2022-11-02 Rev.1.0 |