Description

This family of N-type silicon p-i-n photodiodes is designed for use in a wide variety of broad band low light level applications covering the spectral range from below 400 to over 1100 nm.

Features

• Broad Range of Photosensitive Surface Areas  0.2 mm2 to 100 mm2

• Low Operating Voltage VR = 45V

• Anti-Reflection Coated to Enhance Responsivity at 900 nm

• Hermetically-Sealed Packages

• Spectral Response Range 400 to 1100 nm