1 Features
• Qualified for extended temperature applications
– Device temperature:
–55°C to +125°C ambient operating
temperature range
• 3-V to 65-V input range
• Reverse input protection down to –65 V
• Drives external back to back N-channel MOSFETs
• Ideal diode operation with 9.1-mV A to C forward
voltage drop regulation
• Low reverse detection threshold (–4 mV) with fast
response (0.5 μs)
• Active rectification up to 200-KHz
• 60-mA peak gate (DGATE) turn-on current
• 2.6-A peak DGATE turnoff current
• Integrated 3.8-mA charge pump
• Adjustable overvoltage protection
• Low 2.87-μA shutdown current (EN/UVLO=Low)
• 2.6-A peak DGATE turn-off current
• Meets automotive ISO7637 transient requirements
with a suitable TVS diode
• Available in space saving 12-pin WSON package

2 Applications
• Avionics Input reverse polarity protection
– Sensors
– Imaging
– Radar
• Active ORing for redundant power

3 Description
The LM74810 ideal diode controller drives and
controls external back to back N-channel MOSFETs
to emulate an ideal diode rectifier with power path
ON/OFF control and overvoltage protection. The wide
input supply of 3 V to 65 V allows protection and
control of 12-V and 24-V input powered systems.
The device can withstand and protect the loads
from negative supply voltages down to –65-V. An
integrated ideal diode controller (DGATE) drives the
first MOSFET to replace a Schottky diode for reverse
input protection and output voltage holdup. With a
second MOSFET in the power path the device allows
load disconnect (ON/OFF control) and overvoltage
protection using HGATE control. The device features
an adjustable overvoltage cut-off protection feature.
LM74810 employs reverse current blocking using
linear regulation and comparator scheme. With
common drain configuration of the power MOSFETs,
the mid-point can be utilized for OR-ing designs using
another ideal diode. The LM74810 has a maximum
voltage rating of 65 V. The loads can be protected
from extended overvoltage transients like 200-V
unsuppressed load dumps in 24-V battery systems
by configuring the device with external MOSFETs in
common source topology.