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K7P323666M Scheda tecnica (PDF) - Samsung semiconductor

K7P323666M Datasheet PDF - Samsung semiconductor
Il numero della parte K7P323666M
Scarica  K7P323666M Scarica
Grandezza file   447.45 Kbytes
Page   14 Pages
Produttore elettronici  SAMSUNG [Samsung semiconductor]
Homepage  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
Spiegazioni elettronici 1Mx36 & 2Mx18 SRAM

K7P323666M Datasheet (PDF)

Go To PDF Page Scarica Scheda tecnica
K7P323666M Datasheet PDF - Samsung semiconductor

Il numero della parte K7P323666M
Scarica  K7P323666M Click to download

Grandezza file   447.45 Kbytes
Page   14 Pages
Produttore elettronici  SAMSUNG [Samsung semiconductor]
Homepage  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
Spiegazioni elettronici 1Mx36 & 2Mx18 SRAM

K7P323666M Scheda tecnica (HTML) - Samsung semiconductor


K7P323666M Dettagli del prodotto

FEATURES
• 1Mx36 or 2Mx18 Organizations.
• 2.5V Core/1.5V Output Power Supply (1.9V max VDDQ).
• HSTL Input and Output Levels.
• Differential, HSTL Clock Inputs K, K.
• Synchronous Read and Write Operation
• Registered Input and Registered Output
• Internal Pipeline Latches to Support Late Write.
• Byte Write Capability(four byte write selects, one for each 9bits)
• Synchronous or Asynchronous Output Enable.
• Power Down Mode via ZZ Signal.
• Programmable Impedance Output Drivers.
• JTAG 1149.1 Compatible Test Access port.
• 119(7x17)Pin Ball Grid Array Package(14mmx22mm).




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