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F1130 Scheda tecnica (PDF) - Renesas Technology Corp

F1130 Datasheet PDF - Renesas Technology Corp
Il numero della parte F1130
Scarica  F1130 Scarica
Grandezza file   1640.56 Kbytes
Page   40 Pages
Produttore elettronici  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp
Spiegazioni elettronici Dual Path Lowband RF Receiver 400MHz to 1100MHz

F1130 Datasheet (PDF)

Go To PDF Page Scarica Scheda tecnica
F1130 Datasheet PDF - Renesas Technology Corp

Il numero della parte F1130
Scarica  F1130 Click to download

Grandezza file   1640.56 Kbytes
Page   40 Pages
Produttore elettronici  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp
Spiegazioni elettronici Dual Path Lowband RF Receiver 400MHz to 1100MHz

F1130 Scheda tecnica (HTML) - Renesas Technology Corp


F1130 Dettagli del prodotto

DESCRIPTION
This document describes the specifications for the
F1130 Dual Path RF Receiver consisting of RF
amplifier with bypass, DSA, RF Mixer and IF amplifier
in each signal path. Applications include Multi-mode,
Multi-carrier BaseStation Receivers. F1130 supports
the following frequencies: RF from 400MHz to
1100MHz, LO from 500MHz to 1300MHz, and IF from
25MHz to 400MHz. Refer to the Part # Matrix below
describing the complete series.
The F1130 RF front-end offers 19dB gain with 3.5dB
NF and +37dBm OIP3 performance. The digital step
attenuator provides 30dB adjustment range in 2dB
steps via the SPI interface controller. For strong signal
conditions, each RF amplifier can be bypass controlled
via the SPI interface. The RF front-end output and
mixer input signals are bonded to separate pins to
allow interstage image-reject filtering.
Each of the dual mixer paths provide 9 dB power gain,
10.3dB NF and +36dBm OIP3 performance. An
external LO signal is applied to the mixer LO port.
This device is packaged in a 7 x 7 mm, 48-pin Thin
QFN with 50 ohm single-ended RF & LO inputs and
200 ohm differential IF output impedance for ease of
integration into the receiver lineup.

FEATURES
• Dual Path for Diversity / MIMO
• Glitch-FreeTM Technology
• RF: 400MHz to 1100MHz
• LO: 500MHz to 1300MHz
• IF: 25MHz to 400MHz
• Bypassable RF amplifiers for strong signal
conditions
• 19dB RF front-end power gain
• +37dBm RF front-end OIP3 (Bypass OFF)
• +43dBm RF front-end OIP3 (Bypass ON)
• 3.5dB front-end NF AT 900MHz
• 9dB mixer power gain (HS LO)
• +36dBm mixer OIP3
• 50Ω RF and LO impedance
• 200Ω differential IF output impedance
• Independent CHA, CHB path standby mode
• 30dB gain control range, 2dB steps
• 3 bit SPI control
• Total ICC = 360mA
• 7 x 7 mm, 48-pin VFQFPN package




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A proposito di Renesas Technology Corp


Renesas Technology Corp è una società di semiconduttori giapponesi che fornisce una vasta gamma di microcontrollori, sistemi su chip e dispositivi analogici e di alimentazione per varie applicazioni nei mercati automobilistici, industriali e di consumo.
La società è stata formata nel 2010 attraverso la fusione di NEC Electronics Corporation e Renesas Technology Corporation.
Renesas è uno dei più grandi fornitori di microcontrollori al mondo ed è noto per la sua esperienza nello sviluppo di tecnologie avanzate in settori come l'Internet of Things (IoT), l'intelligenza artificiale (AI) e l'elettronica automobilistica.
La società ha operazioni in oltre 20 paesi e i suoi prodotti vengono utilizzati in una vasta gamma di applicazioni.

*Queste informazioni sono solo a scopo informativo generale, non saremo responsabili per eventuali perdite o danni causati dalle informazioni di cui sopra.




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