Functional description
The AS6UA51216 is a low-power CMOS 8,388,608-bit Static Random Access Memory (SRAM) device organized as 524,288 words × 16 bits. It is designed for memory applications where slow data access, low power, and simple interfacing are desired.

Features
• AS6UA51216
• Intelliwatt™ active power circuitry
• Industrial and commercial temperature ranges available
• Organization: 524,288 words × 16 bits
• 2.7V to 3.6V at 55 ns
• 2.3V to 2.7V at 70 ns
• 1.65V to 2.3V at 100 ns
• Low power consumption: ACTIVE
    - 144 mW at 3.6V and 55 ns
    - 68 mW at 2.7V and 70 ns
    - 28 mW at 2.3 V and 100 ns
• Low power consumption: STANDBY
    - 72 µW max at 3.6V
    - 41 µW max at 2.7V
    - 28 µW max at 2.3V
• 1.2V data retention
• Equal access and cycle times
• Easy memory expansion with CS, OE inputs
• Smallest footprint packages
    - 48-ball FBGA
    - 400-mil 44-pin TSOP II
• ESD protection ≥ 2000 volts
• Latch-up current ≥ 200 mA