P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH

The 2SJ358 is a P-channel vertical MOS FET that can
be used as a switching element. The 2SJ358 can be
directly driven by an IC operating at 5 V.
The 2SJ358 features a low on-resistance and excellent
switching characteristics, and is suitable for applications
such as actuator driver and DC/DC converter.

FEATURES
• New-type compact package
Has advantages of packages for small signals and for
power transistors, and compensates those disadvantages
• Can be directly driven by an IC operating at 5 V.
• Low on-resistance
RDS(ON) = 0.40 W MAX. @VGS = –4 V, ID = –1.5 A
RDS(ON) = 0.30 W MAX. @VGS = –10 V, ID = –1.5 A